CTL0196PS-R3 P-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS -60 V Drain-Source On-Resistance
RDS(ON) 170mΩ, at VGS= -10V, ID= -1.8A RDS(ON) 200mΩ, at VGS= -4.5V, ID= -1.4A
℃ Continuous Drain Current at TC=25 ID = -1.9A
Advanced high cell density Trench Technology RoHS Compliance & Halogen Free
Description
The CTL0196PS-R...
