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CT3401-R3

Part Number	CT3401-R3
Manufacturer	CT Micro
Description	P-Channel MOSFET
Published	May 20, 2020
Detailed Description	CT3401-R3 P-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS - 30 V • Drain-Source On-Resistan...
Datasheet	CT3401-R3 PDF File

Overview

CT3401-R3 P-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS - 30 V • Drain-Source On-Resistance RDS(ON) 53mΩ, at VGS= - 10V, IDS= - 4.
1A RDS(ON) 64mΩ, at VGS= - 4.
5V, IDS= - 4.
0A RDS(ON) 86mΩ, at VGS= - 2.
5V, IDS= - 1.
0A ℃• Continuous Drain Current at TA=25 ID = - 4.
1A • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free Applications • Power Management • LCD Display inverter • Load Switch Description The CT3401-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for low voltage application.
Package Outline Schematic Drain Gate Source Drain Gate Source CT Micro Proprietary...

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CT3401-R3 P-Channel MOSFET - CT Micro

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