Infrared Emitter. IR300N-D0 Datasheet

IR300N-D0 Emitter. Datasheet pdf. Equivalent

Part IR300N-D0
Description Infrared Emitter
Feature IR300N-D0 3mm Lamp Type 940nm Infrared Emitter Features  High radiant intensity  Viewing Angle = .
Manufacture CT Micro
Datasheet
Download IR300N-D0 Datasheet



IR300N-D0
IR300N-D0
3mm Lamp Type 940nm Infrared Emitter
Features
High radiant intensity
Viewing Angle = 150
High reliability
Good spectral matching to Si photo detector
RoHS compliance
Applications
Infrared sensor
Remote control
Description
The IR300N-D0 is a GaAlAs infrared LED diode.
The device has a peak wavelength of 940nm LED
spectrally matched with phototransistor or
photodiode.
Package Outline
Schematic
Anode
Cathode
CT Micro
Proprietary & Confidential
Page 1
Rev 1
May, 2014



IR300N-D0
IR300N-D0
3mm Lamp Type 940nm Infrared Emitter
Absolute Maximum Rating at 250C
Symbol
Parameters
IF Continuous Forward Current
IFP Peak Forward Current
VR Reverse Voltage
Topr Operating Temperature
Tstg Storage Temperature
Tsol Soldering Temperature
PD Power Dissipation at(or below) 25Free Air Temperature
Ratings
100
1.0
5
-40 ~ +85
-40 ~ +100
260
180
Units
mA
A
V
0C
0C
0C
mW
Notes
1
2
Electro-Optical Characteristics TA = 25°C (unless otherwise specified)
Optical Characteristics
Symbol
Parameters
Ie Radiant Intensity
λp
Δλ
θ1/2
Peak Wavelength
Spectral Bandwidth
Angle of Half Intensity
Test Conditions
IF=20mA
IF =100mA, Tp=20ms
IF=20mA
IF=20mA
IF=20mA
Min Typ Max Units Notes
6.5 12 30
3
mW/sr
- 55 -
- 940 - nm
- 50 - nm
- 15 - deg
Electrical Characteristics
Symbol
Parameters
VF Forward Voltage
IR Reverse Current
Test Conditions
IF=20mA
IF =100mA, Tp=20ms
VR=5V
Min Typ Max Units Notes
1.1 1.2 1.5
1.2 1.39 1.8
- - 10
V
μA
Notes:
1 : IFP Conditions--Pulse Width100μs and Duty1%.
2 : Soldering time5 seconds.
3.: Ie Bin Rank :
Bin Code
H
I
K
Min 6.5 10 15
Max 13 20 30
CT Micro
Proprietary & Confidential
Page 2
Rev 1
May, 2014





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