CTL0404NS-R3 N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 40 V Drain-Source On-Resistance
RDS(ON) 32mΩ, at VGS= 10V, ID= 4.0A RDS(ON) 50mΩ, at VGS= 4.5V, ID= 3.0A
℃ Continuous Drain Current at TA=25 ID =4.0A
Advanced high cell density Trench Technology RoHS Compliance & Halogen Free
Description
The CTL0404NS-R3 is the ...
