CTH3903NS-T52 N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 30V Drain-Source On-Resistance
RDS(ON) 11m, at VGS= 10V, ID= 15A RDS(ON) 16m, at VGS= 4.5V, ID= 15A
Continuous Drain Current at TC=25℃ID =39A Advanced high cell density Trench Technology RoHS Compliance & Halogen Free
Description
The CTH3903NS-T52 is the N-C...
