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N-Channel MOSFET. CTH3903NS-T52 Datasheet

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N-Channel MOSFET. CTH3903NS-T52 Datasheet






CTH3903NS-T52 MOSFET. Datasheet pdf. Equivalent




CTH3903NS-T52 MOSFET. Datasheet pdf. Equivalent





Part

CTH3903NS-T52

Description

N-Channel MOSFET



Feature


CTH3903NS-T52 N-Channel Enhancement MOSF ET Features Drain-Source Breakdown Vo ltage VDSS 30V Drain-Source On-Resista nce RDS(ON) 11m, at VGS= 10V, ID= 15 A RDS(ON) 16m, at VGS= 4.5V, ID= 15A Continuous Drain Current at TC=25℃I D =39A Advanced high cell density Tren ch Technology RoHS Compliance & Haloge n Free Description The CTH3903NS-T52 i s the N-Channel logic en.
Manufacture

CT Micro

Datasheet
Download CTH3903NS-T52 Datasheet


CT Micro CTH3903NS-T52

CTH3903NS-T52; hancement mode power field effect transi stors are produced using high cell dens ity, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application. Applications DC /DC Converter Power Management Batter y Powered System Package Outline Sche matic Drain Gate.


CT Micro CTH3903NS-T52

Source Drain Gate Source CT Micro Pr oprietary & Confidential Page 1 Rev 3 Jun, 2015 CTH3903NS-T52 N-Channel Enh ancement MOSFET Absolute Maximum Ratin g at 25oC Symbol Parameters VDS Drai n-Source Voltage VGS Gate-Source Volta ge ID Continuous Drain Current @TC=25 IDM Pulsed Drain Current PD Total Power Dissipation @TC=25℃ TSTG Stor age Temperature Range .


CT Micro CTH3903NS-T52

TJ Operating Junction Temperature Range Thermal Characteristics Symbol Para meters RӨJC Thermal Resistance Junct ion-Case Test Conditions Test Conditi ons 30 ±20 39 100 37 -55 to 150 -55 to 150 Min Note Vs V A1 A1 W2 °C °C M in Typ Max Units Notes -- -- 3.3 oC /W 1,4 CT Micro Proprietary & Confidentia l Page 2 Rev 3 Jun, 2015 CTH3903NS-T 52 N-Channel Enhanceme.

Part

CTH3903NS-T52

Description

N-Channel MOSFET



Feature


CTH3903NS-T52 N-Channel Enhancement MOSF ET Features Drain-Source Breakdown Vo ltage VDSS 30V Drain-Source On-Resista nce RDS(ON) 11m, at VGS= 10V, ID= 15 A RDS(ON) 16m, at VGS= 4.5V, ID= 15A Continuous Drain Current at TC=25℃I D =39A Advanced high cell density Tren ch Technology RoHS Compliance & Haloge n Free Description The CTH3903NS-T52 i s the N-Channel logic en.
Manufacture

CT Micro

Datasheet
Download CTH3903NS-T52 Datasheet




 CTH3903NS-T52
CTH3903NS-T52
N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 30V
Drain-Source On-Resistance
RDS(ON) 11m, at VGS= 10V, ID= 15A
RDS(ON) 16m, at VGS= 4.5V, ID= 15A
Continuous Drain Current at TC=25ID =39A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Description
The CTH3903NS-T52 is the N-Channel logic
enhancement mode power field effect transistors
are produced using high cell density, DMOS trench
technology. This high density process is especially
tailored to minimize on-state resistance. These
devices are particularly suited for low voltage
application.
Applications
DC/DC Converter
Power Management
Battery Powered System
Package Outline
Schematic
Drain
Gate
Source
Drain
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 3
Jun, 2015




 CTH3903NS-T52
CTH3903NS-T52
N-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current @TC=25
IDM Pulsed Drain Current
PD Total Power Dissipation @TC=25
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJC
Thermal Resistance
Junction-Case
Test Conditions
Test Conditions
30
±20
39
100
37
-55 to 150
-55 to 150
Min Note
Vs
V
A1
A1
W2
°C
°C
Min Typ Max Units Notes
-- -- 3.3 oC /W 1,4
CT Micro
Proprietary & Confidential
Page 2
Rev 3
Jun, 2015




 CTH3903NS-T52
CTH3903NS-T52
N-Channel Enhancement MOSFET
Electrical Characteristics TA = 25°C (unless otherwise specified)
Static Characteristics
Symbol
Parameters
BVDSS Drain-Source Breakdown Voltage
IDSS Drain-Source Leakage Current
IGSS Gate-Source Leakage Current
Test Conditions
VGS= 0V, ID= 250μA
VDS = 30V, VGS = 0V
VGS = 20V, VDS = 0V
Min Typ Max Units Notes
30 - - V
--
1 µA
-
-
100
nA
On Characteristics
Symbol
Parameters
RDS(ON)
Drain-Source On-Resistance
VGS(th)
Gate-Source Threshold Voltage
Test Conditions
VGS = 10V, ID = 15A
VGS = 4.5V, ID = 15A
VGS = VDS, ID =250μA
Min Typ Max Units Notes
- 11 15 mΩ
3
16 20 mΩ
1.0 2 3.0 V
3
Dynamic Characteristics
Symbol
Parameters
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
Test Conditions
VGS =0V,
VDVDSS=-=1105VV,
f=1MHz
Min Typ Max Units Notes
- 700 800
- 120 -
pF
- 35 -
Switching Characteristics
Symbol
Parameters
TD(ON)
Turn-On Delay Time
TR Rise Time
TD(OFF)
Turn-Off Delay Time
TF Fall Time
QG Total Gate Charge
QGS Gate-Source Charge
QGD
Gate-Drain (Miller) Charge
f=1MHz
Test Conditions
VDS = 15V ,
VGS = 10V,
RG = 3Ω, RL = 1.5Ω,
ID =10A
VDS = 15V ,
VGS = 10V,
ID =10A
Min Typ Max Units Notes
- 14 17
- 12 15
ns
- 43 55
- 46
- 20 26
- 5 - nC
- 4.9 -
CT Micro
Proprietary & Confidential
Page 3
Rev 3
Jun, 2015



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