N-Channel MOSFET. CTL0502NS-R3 Datasheet

CTL0502NS-R3 MOSFET. Datasheet pdf. Equivalent

Part CTL0502NS-R3
Description N-Channel MOSFET
Feature CTL0502NS-R3 N-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS 20 V • Dra.
Manufacture CT Micro
Datasheet
Download CTL0502NS-R3 Datasheet



CTL0502NS-R3
CTL0502NS-R3
N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 20 V
Drain-Source On-Resistance
RDS(ON) 21m, at VGS= 4.5V, ID= 5.0A
RDS(ON) 24m, at VGS= 2.5V, ID= 3.5A
RDS(ON) 31m, at VGS= 1.8V, ID= 2.8A
Continuous Drain Current at TA=25 ,ID = 5.0A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Description
The CTL0502NS-R3 uses high performance Trench
Technology to provide excellent RDS(ON) and low gate
charge which is suitable for most of the synchronous
buck converter applications.
Applications
Power Management
Lithium Ion Battery
Package Outline
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 3
Jun, 2015



CTL0502NS-R3
CTL0502NS-R3
N-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current @TA=25
IDM Pulsed Drain Current
PD Total Power Dissipation @TA=25
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJA4
Thermal Resistance
Junction-Ambient (t=10s)
Test Conditions
Test Conditions
20
±12
5.0
25
1.4
-55 to 150
-55 to 150
Min Notes
V
V
A1
A1
W2
°C
°C
Min Typ Max Units Notes
-- 175 -- oC /W 1,4
CT Micro
Proprietary & Confidential
Page 2
Rev 3
Jun, 2015





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