N-Channel MOSFET. CTL0266NS-R3 Datasheet

CTL0266NS-R3 MOSFET. Datasheet pdf. Equivalent

Part CTL0266NS-R3
Description N-Channel MOSFET
Feature CTL0266NS-R3 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS -20 V  Dr.
Manufacture CT Micro
Datasheet
Download CTL0266NS-R3 Datasheet



CTL0266NS-R3
CTL0266NS-R3
N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS -20 V
Drain-Source On-Resistance
RDS(ON) 82m, at VGS= 10V, ID= 2.6A
RDS(ON) 96m, at VGS= 4.5V, ID= 2.1A
Continuous Drain Current at TC=25ID = 2.6A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Applications
Power Management
Lithium Ion Battery
Description
The CTL0266NS-R3 is the N-Channel logic
enhancement mode power field effect transistors
are produced using high cell density, DMOS
trench technology. This high density process is
especially tailored to minimize on-state resistance.
These devices are particularly suited for low
voltage application such as cellular phone and
notebook computer power management and other
battery powered circuits where high-side switching
and low in-line power loss are needed in a very
small outline surface mount package.
Package Outline
Schematic
Drain
Gate
Source
Drain
Gate
Source
CT Micro
Proprietary & Confidential
Page 1
Rev 1
Nov, 2013



CTL0266NS-R3
CTL0266NS-R3
N-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current
IDM Pulsed Drain Current
PD Total Power Dissipation
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJA4
Thermal Resistance
Junction-Ambient (t=10s)
Test Conditions
Test Conditions
60
±20
2.6
10
1.04
-55 to 150
-55 to 150
Min Notes
V
V
A1
A1
W2
°C
°C
Min Typ Max Units Notes
-- 110 -- oC /W 1,4
CT Micro
Proprietary & Confidential
Page 2
Rev 1
Nov, 2013





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