Power Rectifier. NRVBS360BNT3 Datasheet

NRVBS360BNT3 Rectifier. Datasheet pdf. Equivalent

Part NRVBS360BNT3
Description Surface Mount Schottky Power Rectifier
Feature Surface Mount Schottky Power Rectifier MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G, NRVBS360.
Manufacture ON Semiconductor
Datasheet
Download NRVBS360BNT3 Datasheet



NRVBS360BNT3
Surface Mount
Schottky Power Rectifier
MBRS360T3G,
MBRS360BT3G,
NRVBS360T3G,
NRVBS360BT3G,
NRVBS360BNT3
This device employs the Schottky Barrier principle in a large area
metaltosilicon power diode. Stateoftheart geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes, in surface mount
applications where compact size and weight are critical to the system.
Features
Small Compact Surface Mountable Package with JBend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Excellent Ability to Withstand Reverse Avalanche Energy Transients
GuardRing for Stress Protection
NRVBS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable*
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics
Case: Epoxy, Molded, Epoxy Meets UL 94 V0
Weight: 217 mg (Approximately), SMC
95 mg (Approximately), SMB
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Polarity: Polarity Band on Plastic Body Indicates Cathode Lead
Device Meets MSL 1 Requirements
ESD Ratings:
Machine Model, C
Human Body Model, 3B
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES, 60 VOLTS
SMC 2LEAD
CASE 403AC
SMB
CASE 403A03
MARKING DIAGRAMS
AYWW
B36G
G
AYWW
B36G
G
B36 = Specific Device Code
A = Assembly Location**
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
**The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly code
may be blank.
ORDERING INFORMATION
Device
MBRS360T3G
MBRS360BT3G
Package
SMC
(PbFree)
SMB
(PbFree)
Shipping
2,500 /
Tape & Reel
2,500 /
Tape & Reel
NRVBS360T3G*
NRVBS360BT3G*
NRVBS360BT3G
VF01*
NRVBS360BNT3G*
SMC
(PbFree)
SMB
(PbFree)
SMB
(PbFree)
SMB
(PbFree)
2,500 /
Tape & Reel
2,500 /
Tape & Reel
2,500 /
Tape & Reel
2,500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
March, 2020 Rev. 14
1
Publication Order Number:
MBRS360T3/D



NRVBS360BNT3
MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G, NRVBS360BNT3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFSM
60
3.0 @ TL = 137°C
4.0 @ TL = 127°C
125
V
A
A
Storage Temperature Range
Tstg 65 to +175
°C
Operating Junction Temperature (Note 1)
TJ 65 to +175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, JunctiontoLead (Note 2)
SMC Package
SMB Package
Symbol
RqJL
Value
11
15
Unit
°C/W
Thermal Resistance, JunctiontoAmbient (Note 2)
SMC Package
SMB Package
RqJA 136 °C/W
145
Thermal Resistance, JunctiontoAmbient (Note 3)
SMC Package
SMB Package (Note 4)
RqJA 71 °C/W
73
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 5)
(iF = 3.0 A, TJ = 25°C)
VF
0.63
V
Maximum Instantaneous Reverse Current (Note 5)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 100°C)
iR mA
0.03
3.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Mounted with minimum recommended pad size, PC Board FR4.
3. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
4. Typical Value; 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
5. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
www.onsemi.com
2





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)