N-Channel MOSFET. SSD02N60SL Datasheet

SSD02N60SL MOSFET. Datasheet pdf. Equivalent

Part SSD02N60SL
Description N-Channel MOSFET
Feature Elektronische Bauelemente SSD02N60SL 2A , 600V , RDS(ON) 4.2Ω N-Ch Enhancement Mode Power MOSFET R.
Manufacture SeCoS
Datasheet
Download SSD02N60SL Datasheet



SSD02N60SL
Elektronische Bauelemente
SSD02N60SL
2A , 600V , RDS(ON) 4.2
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SSD02N60SL is the highest performance trench
N-ch MOSFETs with extreme high cell density , which provide
excellent RDS(on) and gate charge for most of the synchronous
buck converter applications .
TO-252
FEATURES
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
1
Gate
2
Drain
3
Source
A
BC
D
GE
K HF
MJ
N
O
P
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 6.35 6.90 J 2.30 REF.
B 4.95 5.50 K 0.64 1.14
C 2.10 2.50 M 0.50 1.14
D 0.43 0.9 N 1.3 1.8
E 6.0 7.5 O 0 0.13
F 2.80 REF P 0.58REF.
G 5.40 6.40
H 0.60 1.20
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain Current
TC=25°C
TC=100°C
ID
2
1.3
Pulsed Drain Current
IDM 8
Total Power Dissipation
Single Pulse Avalanche Energy 1
TC=25°C
Derate above 25°C
PD
EAS
34
0.27
100
Operating Junction and Storage Temperature Range
TJ, TSTG
-55~150
Thermal Resistance Rating
Maximum Thermal Resistance Junction-Ambient
RθJA
110
Maximum Thermal Resistance Junction-Case
Notes:
1. L=30mH,IAS=2.52A, VDD=145V, RG=25, Starting TJ =25°C
RθJC
3.7
Unit
V
V
A
A
A
W
mJ
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
18-Aug -2014 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 5



SSD02N60SL
Elektronische Bauelemente
SSD02N60SL
2A , 600V , RDS(ON) 4.2
N-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
BVDSS
600 -
-
V VGS=0, ID= 250µA
VGS(th)
2 - 4 V VDS=VGS, ID=250µA
Gate-Source Leakage Current
IGSS - - ±100 nA VGS= ±30V
Drain-Source Leakage Current
IDSS - - 1 µA VDS=600V, VGS=0
Static Drain-Source On-Resistance
Total Gate Charge 1.2
Gate-Source Charge 1.2
Gate-Drain Change 1.2
Turn-on Delay Time 1.2
Rise Time 1.2
Turn-off Delay Time 1.2
Fall Time 1.2
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RDS(ON)
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
-
3.7 4.2
VGS=10V, ID=1A
- 5.67 -
- 1.74 -
- 1.99 -
ID=2A
nC VDS=480V
VGS=10V
- 9.2 -
- 23.4 -
- 15.3 -
VDD=300V
nS ID=2A
RG=25
- 20.1 -
- 250.1 -
- 35.7 -
- 1.1 -
VGS =0
pF VDS=25V
f =1.0MHz
Source-Drain Diode
Diode Forward Voltage
Continuous Source Current
Pulsed Source Current
VSD - - 1.4 V IS=2A, VGS=0
IS - - 2 A Integral Reverse P-N
Junction Diode in the
ISM - - 8 A MOSFET
Reverse Recovery Time
Trr
Reverse Recovery Charge
Qrr
Notes:
1. Pulse Test: Pulse width 300µS, Duty cycle2%
2. Essentially independent of operating temperature.
- 356.75 -
- 1.03 -
ns IS=2A,VGS=0,
µC dlF/dt=100A/µS
http://www.SeCoSGmbH.com/
18-Aug -2014 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 5





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)