N-Channel MOSFET. SID15N10 Datasheet

SID15N10 MOSFET. Datasheet pdf. Equivalent

Part SID15N10
Description N-Channel MOSFET
Feature Elektronische Bauelemente SID15N10 15A, 100V, RDS(ON) 110mΩ N-Ch Enhancement Mode Power MOSFET RoH.
Manufacture SeCoS
Datasheet
Download SID15N10 Datasheet



SID15N10
Elektronische Bauelemente
SID15N10
15A, 100V, RDS(ON) 110m
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SID15N10 provide the designer with the best
combination of fast switching. The TO-251 package is
universally preferred for all commercial-industrial
surface mount applications. The device is suited for
charger, industrial and consumer environment.
FEATURES
RDS(on) 100m@ VGS = 10V
Super high density cell design for extremely low RDS(on)
Exceptional on-resistance and maximum DC current
capability
MARKING
15N10
Date Code
PACKAGE INFORMATION
Package
MPQ
TO-251
2.5K
Leader Size
13’ inch
TO-251
A
B
GE
K
F
C
D
H
MJ
P
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
2.20 2.40
0.45 0.55
6.80 7.20
7.20 7.80
REF.
G
H
J
K
M
P
Millimeter
Min. Max.
5.40 5.80
0.90 1.50
2.30
0.60 0.90
0.50 0.70
0.45 0.60
2
Drain
1
Gate
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current 1
TC=25°C
TC=70°C
ID
IDM
15
13.8
24
Power Dissipation
TC=25°C
TA=25°C
PD
34.7
2
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 ~ 150
Thermal Resistance Ratings
Maximum Thermal Resistance Junction-Ambient (PCB
mount) 3
Maximum Thermal Resistance Junction-Case3
RθJA
RθJC
62.5
3.6
3
Source
Unit
V
V
A
A
A
W
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
22-Apr-2013 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4



SID15N10
Elektronische Bauelemente
SID15N10
15A, 100V, RDS(ON) 110m
N-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test conditions
Drain-Source Breakdown Voltage
BVDSS
100 -
-
V VGS=0, ID=250µA
Gate Threshold Voltage
VGS(th)
1 - 2.5 V VDS=VGS, ID=250µA
Gate-Source Leakage Current
IGSS - - ±100 nA VGS= ±20V
Drain-Source Leakage Current
Static Drain-Source On-Resistance 2
IDSS
RDS(ON)
- - 1 µA VDS=80V, VGS=0
- 100 110 mVGS=10V, ID=8A
Total Gate Charge 2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time 2
Rise Time
Turn-off Delay Time
Fall Time
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
- 26.2 -
- 4.6 -
- 5.1 -
- 4.2 -
- 8.2 -
- 35.6 -
- 9.6 -
ID=10A
nC VDS=80V
VGS=10V
VDS=50V
ID= 10A
nS VGS=10V
RL=5
RG=3.3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss - 1535 -
VGS=0
Coss - 60 - pF VDS=15V
f=1.0MHz
Crss - 37 -
Gate Resistance
Rg - 2 - f=1.0MHz
Source-Drain Diode
Forward On Voltage 2
VSD
Notes:
1. Pulse width limited by maximum junction temperature.
2. Pulse test.
3. Surface Mounted on 1 in2 copper pad of FR4 Board.
--
1.2
V IS=8.0A, VGS=0V
http://www.SeCoSGmbH.com/
22-Apr-2013 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4





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