N-Channel MOSFET. SSD06N70SL Datasheet

SSD06N70SL MOSFET. Datasheet pdf. Equivalent

Part SSD06N70SL
Description N-Channel MOSFET
Feature Elektronische Bauelemente SSD06N70SL 6A , 700V , RDS(ON) 1.7Ω N-Ch Enhancement Mode Power MOSFET R.
Manufacture SeCoS
Datasheet
Download SSD06N70SL Datasheet



SSD06N70SL
Elektronische Bauelemente
SSD06N70SL
6A , 700V , RDS(ON) 1.7
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SSD06N70SL is the highest performance trench
N-ch MOSFETs with extreme high cell density , which provide
excellent RDS(on) and gate charge for most of the synchronous
buck converter applications .
TO-252
FEATURES
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
1
Gate
2
Drain
3
Source
A
BC
D
GE
K HF
MJ
N
O
P
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 6.35 6.90 J 2.30 REF.
B 4.95 5.50 K 0.64 1.14
C 2.10 2.50 M 0.50 0.95
D 0.43 0.9 N 1.3 1.8
E 6.0 7.5 O 0 0.13
F 2.80 REF P 0.58REF.
G 5.40 6.40
H 0.60 1.20
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
VDS 700
Gate-Source Voltage
VGS ±30
Continuous Drain Current
TC=25°C
TC=100°C
ID
6
3.79
Pulsed Drain Current
IDM 24
Total Power Dissipation
Single Pulse Avalanche Energy 1
TC=25°C
Derate above 25°C
PD
EAS
128
1.02
463
Operating Junction and Storage Temperature Range
TJ, TSTG
-55~150
Thermal Resistance Rating
Maximum Thermal Resistance Junction-Ambient
RθJA
110
Maximum Thermal Resistance Junction-Case
Notes:
1. L=30mH,IAS=5A, VDD=140V, RG=25, Starting TJ =25°C
RθJC
0.98
Unit
V
V
A
A
A
W
mJ
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
28-Nov -2013 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 5



SSD06N70SL
Elektronische Bauelemente
SSD06N70SL
6A , 700V , RDS(ON) 1.7
N-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
BVDSS
700 -
-
V VGS=0, ID= 250µA
VGS(th)
2 - 4 V VDS=VGS, ID=250µA
Gate-Source Leakage Current
IGSS - - ±100 nA VGS= ±30V, VDS=0
Drain-Source Leakage Current
IDSS - - 1 µA VDS=700V, VGS=0
Static Drain-Source On-Resistance
Total Gate Charge 1.2
Gate-Source Charge 1.2
Gate-Drain Change 1.2
Turn-on Delay Time 1.2
Rise Time 1.2
Turn-off Delay Time 1.2
Fall Time 1.2
RDS(ON)
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
- 1.35 1.7 VGS=10V, ID=3A
- 16.53 -
- 4.82 -
- 5.7 -
ID=6A
nC VDS=560V
VGS=10V
- 24.73 -
- 37.87 -
- 49.33 -
VDD=350V
nS ID=6A
RG=25
- 29.67 -
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss - 898.6 -
VGS =0
Coss
- 94.7 -
pF VDS=25V
f =1.0MHz
Crss - 2.93 -
Gate Resistance
RG
- 5.1 -
F=1MHz, 1Vpp
Source-Drain Diode
Diode Forward Voltage
VSD
Continuous Source Current
IS
Pulsed Source Current
ISM
Reverse Recovery Time 1
Trr
Reverse Recovery Charge 1
Qrr
Notes:
1. Pulse Test: Pulse width 300µS, Duty cycle2%
2. Essentially independent of operating temperature.
- - 1.4
- -6
- - 24
- 531.25 -
- 3.3 -
V IS=6A, VGS=0
A Integral Reverse P-N
Junction Diode in the
A MOSFET
ns IS=6A,VGS=0,
µC dlF/dt=100A/µS
http://www.SeCoSGmbH.com/
28-Nov -2013 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 5





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