N-Channel MOSFET. S2N7002DW Datasheet

S2N7002DW MOSFET. Datasheet pdf. Equivalent

Part S2N7002DW
Description Dual N-Channel MOSFET
Feature Elektronische Bauelemente S2N7002DW 115mA, 60V Dual N-Channel MOSFET RoHS Compliant Product A Suff.
Manufacture SeCoS
Total Page 3 Pages
Datasheet
Download S2N7002DW Datasheet



S2N7002DW
Elektronische Bauelemente
S2N7002DW
115mA, 60V
Dual N-Channel MOSFET
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
MECHANICAL DATA
Case: SOT-363Molded Plastic.
Case Material-UL Flammability Rating 94V-0
Terminals: Solderable per MIL-STD-202,
Method 208
Weight: 0.006 grams(approx.)
DEVICE MARKING:
702
PACKAGE INFORMATION
Package
MPQ
SOT-363
3K
Leader Size
7’ inch
SOT-363
REF.
A
B
C
D
E
F
Millimeter
Min.
2.00
2.15
1.15
Max.
2.20
2.45
1.35
0.90 1.10
1.20 1.40
0.15 0.35
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.15
0.650 TYP.
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Drain – Source Voltage
Drain – Gate Voltage RGS1M
Gate – Source Voltage
VDS
VDGR
VGS
Continuous Drain Current
Power Dissipation
Maximum Junction-to-Ambient
ID
PD
RθJA
Operating Junction & Storage Temperature Range
Note:
1. Pulse Width Limited by Maximum Junction Temperature.
TJ, TSTG
Rating
60
60
±20
115
380
328
-55~150
Unit
V
V
V
mA
mW
°C / W
°C
http://www.SeCoSGmbH.com/
19-May-2011 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 3



S2N7002DW
Elektronische Bauelemente
S2N7002DW
115mA, 60V
Dual N-Channel MOSFET
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current TC= 25°C
TC= 125°C
On-State Drain Current
Drain-Source On Resistance
Forward Transconductance
TJ= 25°C
TJ= 125°C
V(BR)DSS
60
-
VGS(TH)
1
-
IGSS
--
--
IDSS
--
ID(on)
RDS(ON)
0.5
-
-
-
-
-
gFS 80 -
Body-Drain Diode Ratings
-
2
±1
1
500
-
7.5
13.5
-
V VGS=0, ID=10μA
V VDS=VGS, ID=250μA
μA VDS=0 , VGS= ±20V
μA VDS=60V, VGS=0
VDS=60V, VGS=0
A VGS=10V, VDS=7.5V
VGS=5V, ID=0.05A
VGS=10V, ID=0.5A
ms VDS2 VDS(ON), ID= 0.2A
Diode Forward On–Voltage
Source Current Continuous(Body Diode)
Source Current Pulsed
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-off Delay Time
VSD - - -1.5
IS - - -115
ISM - - -800
Dynamic Characteristics
CISS
- - 50
COSS
CRSS
- - 25
-- 5
Switching Characteristics
Td(ON)
- - 20
Td(OFF) - - 40
V IS=115mA, VGS=0
mA
mA
VDS=25V,
pF VGS=0,
f=1MHz
VDD=25V, I D=0.5A
nS RL=50,
VGEN=10V, RG=25
http://www.SeCoSGmbH.com/
19-May-2011 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 3





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