Barrier Rectifiers. SM120MH Datasheet

SM120MH Rectifiers. Datasheet pdf. Equivalent

Part SM120MH
Description Schottky Barrier Rectifiers
Feature Elektronische Bauelemente SM120MH~SM1100MH 20 ~ 100 V 1.0 Amp Surface Mount Schottky Barrier Rectif.
Manufacture SeCoS
Total Page 2 Pages
Datasheet
Download SM120MH Datasheet



SM120MH
Elektronische Bauelemente
SM120MH~SM1100MH
20 ~ 100 V
1.0 Amp Surface Mount Schottky Barrier Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen-free and RoHS Compliant
FEATURES
Batch process design, excellent power dissipation offers.
better reverse leakage current and thermal resistance.
Low profile surface mounted application.
in order to optimize board space.
Low power loss and low forward voltage drop
High surge, high current capability, and high efficiency.
Fast switching for high efficiency.
Guard-ring for overvoltage protection.
Ultra high-speed switching
Silicon epitaxial planar chip, metal silicon junction.
PACKAGING INFORMATION
Small plastic SMD package.
Case: Molded plastic
Epoxy: UL94-V0 rate flame retardant
Weight: 0.0110 g (Approximately)

Cathode

Anode
SOD-123MH
A
B
F
D
C
E
E
REF.
A
B
C
Millimeter
Min. Max.
3.30 3.70
1.50 1.90
0.60 1.00
REF.
D
E
F
Millimeter
Min. Max.
3.10 (MAX.)
0.80 (TYP.)
0.30 (TYP.)
MARKING CODE
Part Number
SM120MH
SM130MH
SM140MH
SM150MH
Marking Code
12
13
14
15
Part Number
SM160MH
SM180MH
SM1100MH
Marking Code
16
18
10
MAXIMUM RATINGS (Ta = 25°C unless otherwise specified.)
PART NUMBERS
PARAMETERS
Recurrent Peak
Reverse Voltage (Max.)
SYMBOL SM SM SM SM SM
120 130 140 150 160
MH MH MH MH MH
VRRM
20 30 40 50 60
RMS Voltage (Max.)
VRMS
14 21 28 35 42
Reverse Voltage (Max.)
VR 20 30 40 50 60
Forward Voltage (Max.)
VF
0.50
0.70
SM SM UNITS
180 1100
MH MH
80 100
V
56 70
V
80 100
V
0.85 V
TESTING CONDITIONS
Forward
Rectified Current (Max.)
IO
1.0 A See Fig.1
Peak Forward Surge Current
Reverse Current (Max.)
Thermal Resistance (Typ.)
IFSM
IR
RJA
8.3ms single half sine-wave
25 A superimposed on rated load
(JEDEC method)
0.5 VR=VRRM, Ta=25°C
mA
10 VR=VRRM, Ta=125°C
98 °C/W Junction to ambient
Diode Junction
Capacitance (Typ.)
Storage and Operating
Temperature Range
CJ 120
TSTG, TJ -65 ~ 175, -55 to 125
-65 ~ 175, -55 to 150
pF
f=1MHz and applied 4V DC
reverse voltage
°C
http://www.SeCoSGmbH.com/
16-Jul-2010 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 2



SM120MH
Elektronische Bauelemente
SM120MH~SM1100MH
20 ~ 100 V
1.0 Amp Surface Mount Schottky Barrier Rectifiers
RATINGS AND CHARACTERISTIC CURVES
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
1.2
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160 180 200
AMBIENT TEMPERATURE,( C)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
25
20
15
TJ=25 C
8.3ms Single Half
10 Sine Wave
JEDEC method
5
0
1
5 10
50 100
NUMBER OF CYCLES AT 60Hz
350
300
250
200
150
100
50
0
.01
FIG.4-TYPICAL JUNCTION CAPACITANCE
.05 .1
.5 1
5 10
REVERSE VOLTAGE,(V)
50 100
FIG.2-TYPICAL FORWARD
CHARACTERISTICS
50
10
3.0
1.0
0.1
SM180-MH~SM1T1J0=02-M5HC
Pulse Width 300us
1% Duty Cycle
.01
.1
.3 .5 .7 .9 1.1 1.3 1.5
FORWARD VOLTAGE,(V)
FIG.5 - TYPICAL REVERSE
CHARACTERISTICS
100
10
1.0
TJ=75 C
.1
TJ=25 C
.01
0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
http://www.SeCoSGmbH.com/
16-Jul-2010 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 2





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)