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SIDC10D120H8 Datasheet, Equivalent, switching diode.

Fast switching diode

Fast switching diode

 

 

 

Part SIDC10D120H8
Description Fast switching diode
Feature SIDC10D120H8 Fast switching diode chip in Emitter Controlled Technology Featu res: 1200V Emitter Controlled technolo gy 120 µm chip Soft, fast switching Low reverse recovery charge Small temp erature coefficient Qualified accordin g to JEDEC for target applications Rec ommended for: Power modules and discre te devices Applications: SMPS, resonan t applications, drives Chip Type VR IFn SIDC10D120H8 1200V 15A Die Size 3 .
2 x 3.
2 mm2 Package sawn on foil Mec hanical Parameters Die size Area total 3.
2 x 3.
2 10.
24 mm2 Anode pad size 2.
48 x 2.
48 Thickness 120 µm Wafer size 200 mm .
Manufacture Infineon
Datasheet
Download SIDC10D120H8 Datasheet
Part SIDC10D120H8
Description Fast switching diode
Feature SIDC10D120H8 Fast switching diode chip in Emitter Controlled Technology Featu res: 1200V Emitter Controlled technolo gy 120 µm chip Soft, fast switching Low reverse recovery charge Small temp erature coefficient Qualified accordin g to JEDEC for target applications Rec ommended for: Power modules and discre te devices Applications: SMPS, resonan t applications, drives Chip Type VR IFn SIDC10D120H8 1200V 15A Die Size 3 .
2 x 3.
2 mm2 Package sawn on foil Mec hanical Parameters Die size Area total 3.
2 x 3.
2 10.
24 mm2 Anode pad size 2.
48 x 2.
48 Thickness 120 µm Wafer size 200 mm .
Manufacture Infineon
Datasheet
Download SIDC10D120H8 Datasheet

SIDC10D120H8

SIDC10D120H8
SIDC10D120H8

SIDC10D120H8

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