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FF200R12KE3 Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part FF200R12KE3
Description IGBT
Feature TechnischeInformation/TechnicalInfor mation IGBT-Module IGBT-modules FF200 R12KE3 IGBT,Wechselrichter/IGBT,Inve rter HöchstzulässigeWerte/Maximum RatedValues Kollektor-Emitter-Sperrs pannung Collector-emittervoltage Tvj = 25°C Kollektor-Dauergleichstrom Con tinuousDCcollectorcurrent TC = 80° C, Tvj max = 150°C TC = 25°C, Tvj max = 150°C PeriodischerKollektor-Spitz enstrom Repetitivepeakcollectorcurre nt tP = 1 ms Gesamt-Verlustleistung T otalpowerdissipation TC = 25°C, Tvj max = 150 Gate-Emitter-Spitzenspannun g Gate-emitterpeakvoltage  VCES  IC nom IC  ICRM  .
Manufacture Infineon
Datasheet
Download FF200R12KE3 Datasheet
Part FF200R12KE3
Description IGBT
Feature TechnischeInformation/TechnicalInfor mation IGBT-Module IGBT-modules FF200 R12KE3 IGBT,Wechselrichter/IGBT,Inve rter HöchstzulässigeWerte/Maximum RatedValues Kollektor-Emitter-Sperrs pannung Collector-emittervoltage Tvj = 25°C Kollektor-Dauergleichstrom Con tinuousDCcollectorcurrent TC = 80° C, Tvj max = 150°C TC = 25°C, Tvj max = 150°C PeriodischerKollektor-Spitz enstrom Repetitivepeakcollectorcurre nt tP = 1 ms Gesamt-Verlustleistung T otalpowerdissipation TC = 25°C, Tvj max = 150 Gate-Emitter-Spitzenspannun g Gate-emitterpeakvoltage  VCES  IC nom IC  ICRM  .
Manufacture Infineon
Datasheet
Download FF200R12KE3 Datasheet

FF200R12KE3

FF200R12KE3
FF200R12KE3

FF200R12KE3

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