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N0026S

InterFET

Process Geometry


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InterFET Product Folder Technical Support Order Now N0026S N0026S Process Geometry Features Low Input Capacitance: 4.3pF Typical Low Gate Leakage: 10pA Typical High Breakdown Voltage: -45V Typical High Input Impedance Small Die: 365um X 365um X 203um Bond Pads: 90um X 90um Substrate Connected to Gate Au Back-Side Finish Applications S...



InterFET

N0026S

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