DatasheetsPDF.com

N0014L

InterFET

Process Geometry


Description
InterFET Product Folder Technical Support Order Now N0014L N0014L Process Geometry Features Low Input Capacitance: 2.3pF Typical Low Gate Leakage: 2.0pA Typical High Breakdown Voltage: -30V Typical High Input Impedance Small Die: 365um X 365um X 203um Bond Pads: 90um X 90um and 66um Dia. Substrate Connected to Gate Au Back Side Finish A...



InterFET

N0014L

File Download Download N0014L Datasheet


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)