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FZ800R45KL3_B5

Infineon

IGBT


Description
FZ800R45KL3_B5 Highly insulated module Highly insulated module with Trench/Fieldstop IGBT3 and emitter controlled 3 diode Features Electrical features - VCES = 4500 V - IC nom = 800 A / ICRM = 1600 A - High DC stability - High dynamic robustness - High short-circuit capability - Low VCE,sat - Trench IGBT 3 - VCE,sat with positive temperature coefficient ...



Infineon

FZ800R45KL3_B5

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