Power Transistor. IAUT300N08S5N014 Datasheet

IAUT300N08S5N014 Transistor. Datasheet pdf. Equivalent

Part IAUT300N08S5N014
Description Power Transistor
Feature IAUT300N08S5N014 OptiMOS™-5 Power-Transistor Features • N-channel - Enhancement mode • AEC qualifie.
Manufacture Infineon
Datasheet
Download IAUT300N08S5N014 Datasheet



IAUT300N08S5N014
IAUT300N08S5N014
OptiMOS-5 Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
Product Summary
VDS
RDS(on)
ID
80 V
1.4 mW
300 A
P/G -HSOF-8-1
Tab
8
1 Tab
1
8
Drain
Tab
Type
Package
IAUT300N08S5N014 P/G-HSOF-8-1
Marking
5N08014
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
ID
T C=25°C, V GS=10V1)
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse2)
E AS
I D=150 A
Avalanche current, single pulse
I AS
-
Gate source voltage
V GS
-
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Gate
pin 1
Source
pin 2 - 8
Value
Unit
300
A
230
1200
600
mJ
300
A
±20
V
300
W
-55 ... +175
°C
55/175/56
Rev. 1.0
page 1
2017-12-15



IAUT300N08S5N014
IAUT300N08S5N014
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case R thJC -
Values
Unit
min. typ. max.
-
-
0.5 K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage2)
V (BR)DSS
V GS=0 V,
I D=1 mA
80
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=230 µA
2.2
3
3.8
Zero gate voltage drain current2)
I DSS
V DS=80 V, V GS=0 V,
T j=25 °C
-
0.1
1 µA
V DS=40 V, V GS=0 V,
T j=85 °C2)
-
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
Drain-source on-state resistance
RDS(on) V GS=6 V, I D=75 A
-
V GS=10 V, I D=100 A
-
1
20
-
100 nA
1.6
2.1
1.1
1.4
Rev. 1.0
page 2
2017-12-15





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