Control Thyristor. TT700N22KOF Datasheet

TT700N22KOF Thyristor. Datasheet pdf. Equivalent

Part TT700N22KOF
Description Phase Control Thyristor
Feature Netz-Thyristor-Modul Phase Control Thyristor Module Technische Information / technical information .
Manufacture Infineon
Datasheet
Download TT700N22KOF Datasheet



TT700N22KOF
Netz-Thyristor-Modul
Phase Control Thyristor Module
Technische Information /
technical information
TT700N22KOF
Key Parameters
VDRM / VRRM
ITAVM
ITSM
VT0
rT
RthJC
Base plate
2200V
700A (TC=85°C)
20400A
0,85V
0,35mΩ
0,046K/W
60mm
For type designation please refer to actual
short form catalog
http://www.ifbip.com/catalog
Merkmale
Druckkontakt-Technologie für hohe
Zuverlässigkeit
Advanced Medium Power Technology (AMPT)
Industrie-Standard-Gehäuse
Elektrisch isolierte Bodenplatte
Optional: Thermisches Interface Material
(TIM) bereits aufgetragen
Features
Pressure contact technology for high reliability
Advanced Medium Power Technology (AMPT)
Industrial standard package
Electrically insulated base plate
Option: Pre-applied thermal interface material (TIM)
Typische Anwendungen
Sanftanlasser
Gleichrichter für Antriebsapplikationen
Kurzschließer-Applikationen
Leistungssteller
Gleichrichter für UPS
Batterieladegleichrichter
Statische Umschalter
Bypass-Schalter
Typical Applications
Soft starter
Rectifier for drives applications
Crowbar applications
Power controllers
Rectifiers for UBS
Battery chargers
Static switches
Bypass swich
content of customer DMX code
serial number
SAP material number
Internal production order number
datecode (production year)
datecode (production week)
DMX code
digit
1..5
6..12
13..20
21..22
23..24
DMX code
digit quantity
5
7
8
2
2
Date of Publication 2019-08-16
Revision: 3.2
TT
TD
www.ifbip.com
support@infineon-bip.com
Seite/page 1/11



TT700N22KOF
Netz-Thyristor-Modul
Phase Control Thyristor Module
Technische Information /
technical information
TT700N22KOF
TT700N22KOF
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C... Tvj max
repetitive peak forward off-state and reverse voltages
TD700N22KOF
VDRM,VRRM
Vorwärts-Stoßspitzensperrspannung
non-repetitive peak forward off-state voltage
Rückwärts-Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
Tvj = -40°C... Tvj max
VDSM
Tvj = +25°C... Tvj max
VRSM
ITRMSM
TC = 85°C
ITAVM
Tvj = 25°C, tP = 10ms
Tvj = Tvj max, tP = 10ms
Tvj = 25°C, tP = 10ms
Tvj = Tvj max, tP = 10ms
DIN IEC 747-6
f = 50Hz, iGM = 1A, diG/dt = 1A/µs
Tvj = Tvj max, vD = 0,67 VDRM
ITSM
I²t
(diT/dt)cr
(dvD/dt)cr
TD700N22KOF_TIM
2200 V
2200 V
2300 V
1050 A
700 A
20400 A
17100 A
2080800 A²s
1462050 A²s
200 A/µs
1000 V/µs
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Tvj = Tvj max , iT = 1500 A
Schleusenspannung
threshold voltage
Tvj = Tvj max
Ersatzwiderstand
slope resistance
Durchlasskennlinie
on-state characteristic
iT 3000 A
v T A(Tvj ) B(Tvj ) i T C(Tvj ) ln(i T 1) D(Tvj )
Tvj = Tvj max
A = αA * Tvj + βA
B = αB * Tvj + βB
iT
C = αC * Tvj + βC
D = αD * Tvj + βD
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Tvj = 25°C, vD = 12V
Tvj = 25°C, vD = 12V
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
Zündverzug
gate controlled delay time
Tvj = Tvj max , vD = 12V
Tvj = Tvj max , vD = 0,5 VDRM
Tvj = Tvj max , vD = 0,5 VDRM
Tvj = 25°C, vD = 12V, RA = 1Ω
Tvj = 25°C, vD = 12V, RGK ≥ 10Ω
iGM = 1A, diG/dt = 1A/µs, tg = 20µs
Tvj = Tvj max
vD = VDRM, vR = VRRM
DIN IEC 747-6
Tvj = 25°C, iGM = 1A, diG/dt = 1A/µs
vT
max. 1,5 V
V(TO)
max. 0,85 V
rT
max. 0,35 mΩ
α
β
A= -2,816E-03 8,487E-01
B= 6,470E-07 1,179E-04
C= 2,964E-04 9,707E-04
D= -6,219E-06 6,831E-03
IGT
max. 250 mA
VGT
max. 2,2 V
IGD
max. 10 mA
max.
5 mA
VGD
max. 0,25 V
IH
max. 300 mA
IL
max. 1500 mA
iD, iR
max. 120 mA
tgd
max.
4 µs
prepared by: AG
approved by: ML
date of publication: 2019-08-16
revision:
3.2
Date of Publication 2019-08-16
Revision: 3.2
Seite/page 2/11





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