Control Thyristor. TT500N Datasheet

TT500N Thyristor. Datasheet pdf. Equivalent

Part TT500N
Description Phase Control Thyristor
Feature Netz-Thyristor-Modul Phase Control Thyristor Module Technische Information / technical information .
Manufacture Infineon
Datasheet
Download TT500N Datasheet



TT500N
Netz-Thyristor-Modul
Phase Control Thyristor Module
Technische Information /
technical information
TT500N
Key Parameters
VDRM / VRRM
ITAVM
ITSM
VT0
rT
RthJC
Base plate
Weight
1200 - 1800V
500A (TC=85°C)
17000A
0,85V
0,35mΩ
0,055K/W
60mm
1450g
For type designation please refer to actual
short form catalog
http://www.ifbip.com/catalog
Merkmale
Druckkontakt-Technologie für hohe
Zuverlässigkeit
Advanced Medium Power Technology (AMPT)
Industrie-Standard-Gehäuse
Elektrisch isolierte Bodenplatte
Optional: Thermisches Interface Material (TIM)
bereits aufgetragen
Features
Pressure contact technology for high reliability
Advanced Medium Power Technology (AMPT)
Industrial standard package
Electrically insulated base plate
Option: Pre-applied thermal interface material (TIM)
Typische Anwendungen
Sanftanlasser
Gleichrichter für Antriebsapplikationen
Kurzschließer-Applikationen
Leistungssteller
Gleichrichter für UPS
Batterieladegleichrichter
Statische Umschalter
Typical Applications
Soft starter
Rectifier for drives applications
Crowbar applications
Power controllers
Rectifiers for UBS
Battery chargers
Static switches
content of customer DMX code
serial number
SAP material number
Internal production order number
datecode (production year)
datecode (production week)
DMX code
digit
1..5
6..12
13..20
21..22
23..24
DMX code
digit quantity
5
7
8
2
2
Date of Publication 2016-11-25
Revision: 3.4
TT
TD
www.ifbip.com
support@infineon-bip.com
Seite/page 1/11



TT500N
Netz-Thyristor-Modul
Phase Control Thyristor Module
Technische Information /
technical information
TT500N
TT500N
TT500N16KOF_TIM
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C... Tvj max
repetitive peak forward off-state and reverse voltages
TD500N
TD500N16KOF_TIM
VDRM,VRRM 1200
1600
1400 V
1800 V
Vorwärts-Stoßspitzensperrspannung
non-repetitive peak forward off-state voltage
Rückwärts-Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
Tvj = -40°C... Tvj max
Tvj = +25°C... Tvj max
VDSM
VRSM
ITRMSM
1200
1600
1300
1700
1400 V
1800 V
1500 V
1900 V
900 A
TC = 85°C
ITAVM
500 A
Tvj = 25°C, tP = 10ms
Tvj = Tvj max, tP = 10ms
Tvj = 25°C, tP = 10ms
Tvj = Tvj max, tP = 10ms
DIN IEC 747-6
f = 50Hz, iGM = 1A, diG/dt = 1A/µs
Tvj = Tvj max, vD = 0,67 VDRM
6.Kennbuchstabe / 6th letter C
ITSM
I²t
(diT/dt)cr
(dvD/dt)cr
17000 A
14500 A
1445000 A²s
1051000 A²s
200 A/µs
1000 V/µs
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
Zündverzug
gate controlled delay time
Tvj = Tvj max , iT = 1700 A
vT
Tvj = Tvj max
V(TO)
Tvj = Tvj max
rT
Tvj = 25°C, vD = 12V
IGT
Tvj = 25°C, vD = 12V
VGT
Tvj = Tvj max , vD = 12V
Tvj = Tvj max , vD = 0,5 VDRM
Tvj = Tvj max , vD = 0,5 VDRM
IGD
VGD
Tvj = 25°C, vD = 12V, RA = 1Ω
IH
Tvj = 25°C, vD = 12V, RGK ≥ 10Ω
iGM = 1A, diG/dt = 1A/µs, tg = 20µs
Tvj = Tvj max
vD = VDRM, vR = VRRM
DIN IEC 747-6
Tvj = 25°C, iGM = 1A, diG/dt = 1A/µs
IL
iD, iR
tgd
max. 1,45 V
max. 0,85 V
max. 0,35 mΩ
max. 250 mA
max. 2,2 V
max.
max.
max.
10 mA
5 mA
0,25 V
max. 300 mA
max. 1500 mA
max. 100 mA
max.
4 µs
prepared by: AG
approved by: MS
date of publication: 2016-11-25
revision:
3.4
Date of Publication 2016-11-25
Revision: 3.4
Seite/page 2/11





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