FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 39.5dBm at 10.7GHz to 11.7GHz ･HIGH GAIN
G1dB= 9.0dB at 10.7GHz to 11.7GHz ･LOW INTERMODULATION DISTOTION
IM3=-45dBc at Pout= 27.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM1011-8UL
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C)
CHARACTERISTICS Output Power at ...
