GaN HEMT. TGI5867-130LHA Datasheet

TGI5867-130LHA HEMT. Datasheet pdf. Equivalent

Part TGI5867-130LHA
Description MICROWAVE POWER GaN HEMT
Feature MICROWAVE POWER GaN HEMT TGI5867-130LHA FEATURES ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER Pou.
Manufacture Toshiba
Datasheet
Download TGI5867-130LHA Datasheet



TGI5867-130LHA
MICROWAVE POWER GaN HEMT
TGI5867-130LHA
FEATURES
ŋBROAD BAND INTERNALLY MATCHED HEMT
ŋHIGH POWER
Pout= 51.0dBm at Pin= 43dBm
ŋHIGH GAIN
GL= 12.5dB at Pin= 20dBm
ŋLOW INTERMODULATION DISTORTION
IM3= -25dBc(Min.) at Pout= 44dBm (Single Carrier Level)
ŋHERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
SYMBOL
CONDITIONS
UNIT MIN. TYP. MAX.
Output Power
Drain Current
Power Added Efficiency
Pout
IDS1
add
VDS= 40V
IDSset= 0.8A
f = 5.85 to 6.75GHz
@Pin= 43dBm
dBm 50.0 51.0
A
7.0
9.0
%
38
Linear Gain
Gain flatness
GL
@Pin= 20dBm
G
dB
11.5 12.5
dB
0.8
3rd Order Intermodulation
Distortion
Drain Current
Channel Temperature Rise *1
IM3
IM3-2
IDS2
Tch
Two-Tone Test
Po= 44dBm,
(Single Carrier Level)
∆f= 5MHz (IM3)
f= 150MHz (IM3-2)
dBc
-25
-30
dBc
-25
-27
A
5.0
°C
120 140
Recommended Gate Resistance(Rg): 10
*1: ∆Tch = (VDS IDS2 Pin(two-tone) Po(two-tone)) Rth(c-c), calculated using parameters of IM3 test
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS
Transconductance
Pinch-off Voltage
SYMBOL
gm
VGSoff
CONDITIONS
VDS= 5V
IDS= 10.0A
VDS= 5V
IDS= 30mA
Gate-Source Breakdown Voltage
VGSO IGS= -25mA
Thermal Resistance
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
S
8.0
V
-2.0 -3.0 -5.0
V
-10
°C/W
0.8
1.0
The information contained herein is presented as guidance for product use. No responsibility is assumed by Toshiba
Infrastructure Systems & Solutions Corporation (hereinafter, referred to as “TISS”) for any infringement of patents or
any other intellectual property rights of third parties that may result from the use of product. No license to any intellectual
property right is granted by this document. The information contained herein is subject to change without prior notice.
It is advisable to contact TISS before proceeding with design of equipment incorporating this product.
©2019 Toshiba Infrastructure Systems & Solutions Corporation
4_20190903_No1343 Page: 1 / 6



TGI5867-130LHA
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
MICROWAVE POWER GaN HEMT
TGI5867-130LHA
CHARACTERISTICS
SYMBOL
UNIT
RATING
Drain-Source Voltage
VDS
V
50
Gate-Source Voltage
VGS
V
-10
Drain Current
Total Power Dissipation (Tc= 25°C)
Channel Temperature
Storage Temperature
IDS
A
12
PT
W
200
Tch
°C
225
Tstg
°C
-65 to +175
PACKAGE OUTLINE ( 7-AA06A )
Unit in mm
Gate
Source
Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C or 3 seconds at
350°C
©2019 Toshiba Infrastructure Systems & Solutions Corporation
4_20190903_No1343 Page: 2 / 6





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