FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 45.0dBm at 7.7GHz to 8.5GHz ･HIGH GAIN
G1dB= 8.5dB at 7.7GHz to 8.5GHz ･LOW INTERMODULATION DISTORTION
IM3(MIN.)= -44dBc at Pout= 34.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM7785-30UL
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Pow...
