GaAs FET. TIM1314-30L Datasheet

TIM1314-30L FET. Datasheet pdf. Equivalent

Part TIM1314-30L
Description MICROWAVE POWER GaAs FET
Feature MICROWAVE POWER GaAs FET TIM1314-30L FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 4.
Manufacture Toshiba
Datasheet
Download TIM1314-30L Datasheet



TIM1314-30L
MICROWAVE POWER GaAs FET
TIM1314-30L
FEATURES
ŋBROAD BAND INTERNALLY MATCHED FET
ŋHIGH POWER
P1dB= 45.0dBm at 13.75GHz to 14.5GHz
ŋHIGH GAIN
G1dB= 5.0dB at 13.75GHz to 14.5GHz
ŋLOW INTERMODULATION DISTORTION
IM3= -25dBc(Min.) at Pout= 38dBm (Single Carrier Level)
ŋHERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
Output Power at 1dB
Gain Compression Point
Power Gain at 1dB
Gain Compression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB
IDS1
G
VDS= 10V
IDSset= 7.0A
f= 13.75 to 14.5GHz
UNIT
dBm
dB
A
dB
Power Added Efficiency
3rd Order Intermodulation
Distortion
Drain Current
Channel Temperature Rise
add
IM3
IDS2
Tch
%
Two-Tone Test
dBc
Po= 38dBm, f= 5MHz
(Single Carrier Level)
A
(VDS IDS Pin P1dB)
Rth(c-c)
°C
Recommended Gate Resistance (Rg): 10
MIN.
44.0
4.0
-25
TYP. MAX.
45.0
5.0
10.0
22
11.0
0.8
9.0 10.1
100
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
SYMBOL
gm
VGSoff
IDSS
CONDITIONS
VDS= 3V
IDS= 9.6A
VDS= 3V
IDS= 290mA
VDS= 3V
VGS= 0V
Gate-Source Breakdown Voltage
VGSO IGS= -290A
Thermal Resistance
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
S
5.5
V
-0.7 -2.0 -4.5
A
20.0
V
-5
°C/W
1.0
1.1
The information contained herein is presented as guidance for product use. No responsibility is assumed by Toshiba
Infrastructure Systems & Solutions Corporation (hereinafter, referred to as “TISS”) for any infringement of patents or
any other intellectual property rights of third parties that may result from the use of product. No license to any intellectual
property right is granted by this document. The information contained herein is subject to change without prior notice.
It is advisable to contact TISS before proceeding with design of equipment incorporating this product.
©2019 Toshiba Infrastructure Systems & Solutions Corporation
2_20191001_No1178 Page: 1 / 7



TIM1314-30L
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
MICROWAVE POWER GaAs FET
TIM1314-30L
CHARACTERISTICS
SYMBOL
UNIT
RATING
Drain-Source Voltage
VDS
V
15
Gate-Source Voltage
VGS
V
-5
Drain Current
Total Power Dissipation (Tc= 25°C)
Channel Temperature
Storage
IDS
A
20
PT
W
136
Tch
°C
175
Tstg
°C
-65 to +175
PACKAGE OUTLINE ( 7-AA03B )
Unit in mm
Gate
Source
Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C or 3 seconds at
350°C
©2019 Toshiba Infrastructure Systems & Solutions Corporation
2_20191001_No1178 Page: 2 / 7





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