MICROWAVE POWER GaAs FET
TIM1314-30L
FEATURES
ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 45.0dBm at 13.75GHz to 14.5GHz ŋHIGH GAIN
G1dB= 5.0dB at 13.75GHz to 14.5GHz ŋLOW INTERMODULATION DISTORTION
IM3= -25dBc(Min.) at Pout= 38dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output...
