GaAs FET. TIM0910-8 Datasheet

TIM0910-8 FET. Datasheet pdf. Equivalent

Part TIM0910-8
Description MICROWAVE POWER GaAs FET
Feature FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 39.5dBm at 9.5GHz to 10.5GHz ・HIGH GAI.
Manufacture Toshiba
Datasheet
Download TIM0910-8 Datasheet



TIM0910-8
FEATURES
BROAD BAND INTERNALLY MATCHED FET
HIGH POWER
P1dB= 39.5dBm at 9.5GHz to 10.5GHz
HIGH GAIN
G1dB= 6.0dB at 9.5GHz to 10.5GHz
HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM0910-8
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
Output Power at 1dB
Gain Compression Point
Power Gain at 1dB
Gain Compression Point
Drain Current
SYMBOL
CONDITIONS
P1dB
G1dB
IDS
VDS= 9V
IDSset= 4.0A
f = 9.5 to 10.5GHz
UNIT
dBm
dB
A
Power Added Efficiency
add
%
Channel Temperature Rise
Tch
(VDS X IDS + Pin P1dB)
X Rth(c-c)
°C
Recommended Gate Resistance(Rg): 100
MIN.
38.5
5.0
TYP. MAX.
39.5
6.0
3.4
4.4
22
80
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown Voltage
Thermal Resistance
SYMBOL
gm
VGSoff
IDSS
CONDITIONS
VDS= 3V
IDS= 4.0A
VDS= 3V
IDS= 120mA
VDS= 3V
VGS= 0V
VGSO IGS= -120A
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
S
2.4
V
-2.0 -3.5 -5.0
A
8.0
V
-5
°C/W
1.6
2.5
The information contained herein is presented as guidance for product use. No responsibility is assumed by
TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION (hereinafter, referred to as TISS) for
any infringement of patents or any other intellectual property rights of third parties that may result from the use of
product. No license to any intellectual property right is granted by this document. The information contained herein is
subject to change without prior notice. It is advisable to contact TISS before proceeding with design of equipment
incorporating this product.
Copyright © 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 0_20170921_No1130 Page: 1 / 4



TIM0910-8
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
MICROWAVE POWER GaAs FET
TIM0910-8
CHARACTERISTICS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation (Tc= 25°C)
Channel Temperature
Storage
SYMBOL
VDS
VGS
IDS
PT
Tch
Tstg
UNIT
V
V
A
W
°C
°C
RATING
15
-5
10.4
60
175
-65 to +175
PACKAGE OUTLINE (2-11C1B)
Unit in mm
(1) Gate
(2) Source
(3) Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C or 3 seconds at
350°C.
Copyright © 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 0_20170921_No1130 Page: 2 / 4





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