FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 48.0dBm at 7.1GHz to 7.9GHz ･HIGH GAIN
G1dB= 6.5dB at 7.1GHz to 7.9GHz ･LOW INTERMODULATION DISTORTION
IM3= -45dBc at Pout= 36.5dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM7179-60SL
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at ...
