Normally-On JFET. UJ3N065025K3S Datasheet

UJ3N065025K3S JFET. Datasheet pdf. Equivalent

Part UJ3N065025K3S
Description SiC Normally-On JFET
Feature 25mW - 650V SiC Normally-On JFET | UJ3N065025K3S Datasheet Description United Silicon Carbide, Inc .
Manufacture UnitedSiC
Datasheet
Download UJ3N065025K3S Datasheet



UJ3N065025K3S
25mW - 650V SiC Normally-On JFET | UJ3N065025K3S
Datasheet
Description
United Silicon Carbide, Inc offers the high-performance G3 SiC normally-
on JFET transistors. This series exhibits ultra-low on resistance (RDS(ON))
and gate charge (QG) allowing for low conduction and switching loss. The
device normally-on characteristics with low RDS(ON) at VGS = 0 V is also
ideal for current protection circuits without the need for active control,
as well as for cascode operation.
CASE
G (1)
CASE
D (2)
123
Part Number
UJ3N065025K3S
S (3)
Package
TO-247-3L
Marking
UJ3N065025K3S
Features
w Typical on-resistance RDS(on),typ of 25mW
w Voltage controlled
w Maximum operating temperature of 175°C
w Extremely fast switching not dependent on temperature
w Low gate charge
w Low intrinsic capacitance
w RoHS compliant
Typical Applications
w Over current protection circuits
w DC-AC inverters
w Switch mode power supplies
w Power factor correction modules
w Motor drives
w Induction heating
Maximum Ratings
Parameter
Symbol
Test Conditions
Drain-source voltage
Gate-source voltage
VDS
DC
VGS
AC (1)
Continuous drain current (2)
Pulsed drain current (3)
Power dissipation
Maximum junction temperature
Operating and storage temperature
Max. lead temperature for soldering,
1/8” from case for 5 seconds
ID
IDM
Ptot
TJ,max
TJ, TSTG
TL
TC = 25°C
TC = 100°C
TC = 25°C
TC=25°C
(1) +20V AC rating applies for turn-on pulses <200ns applied with external RG > 1W.
(2) Limited by TJ,max
(3) Pulse width tp limited by TJ,max
Value
650
-20 to +3
-20 to +20
85
62
250
441
175
-55 to 175
250
Units
V
V
A
A
A
W
°C
°C
°C
Rev. B, December 2018
1
For more information go to www.unitedsic.com.



UJ3N065025K3S
25mW - 650V SiC Normally-On JFET | UJ3N065025K3S
Datasheet
Electrical Characteristics (TJ = +25°C unless otherwise specified)
Typical Performance - Static
Parameter
Drain-source breakdown voltage
Total drain leakage current
Total gate leakage current
Drain-source on-resistance
Gate threshold voltage
Gate resistance
Symbol
Test Conditions
Min
BVDS
VGS= - 20V, ID=1mA
650
VDS = 650V,
ID
VGS = -20V, TJ = 25°C
VDS = 650V,
VGS = -20V, TJ = 175°C
IG
VGS=-20V, Tj=25°C
VGS=-20V, Tj=175°C
VGS=2V, ID=20A,
TJ = 25°C
RDS(on)
VGS=0V, ID=20A,
TJ = 25°C
VGS=2V, ID=20A,
TJ = 175°C
VGS=0V, ID=20A,
TJ = 175°C
VG(th)
VDS = 5V, ID = 70mA
-14
RG
f = 1MHz, open drain
Value
Typ
Max
10
60
40
10
100
38
22
25
33
38
43
-11.5
-6
2.5
Units
V
mA
mA
mW
V
W
Rev. B, December 2018
2
For more information go to www.unitedsic.com.





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)