P-Channel MOSFET. SI5618 Datasheet

SI5618 MOSFET. Datasheet pdf. Equivalent

Part SI5618
Description P-Channel MOSFET
Feature Features • Advanced Trench Cell Design • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensit.
Manufacture MCC
Datasheet
Download SI5618 Datasheet



SI5618
Features
• Advanced Trench Cell Design
• Epoxy Meets UL 94 V-0 Flammability Rating
• Moisture Sensitivity Level 1
• Halogen Free Available Upon Request By Adding Suffix "-HF"
• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
Maximum Ratings
• Operating Junction Temperature Range : -55°C to +150°C
• Storage Temperature Range: -55°C to +150°C
• Thermal Resistance: 150°C/W Junction to Ambient
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Volltage
VGS
Continuous Drain
Current(Note 1)
TA=25°C
ID
TA=100°C
Pulsed Drain Current (Note 2)
IDM
Total Power Dissipation
PD
Note:
1.Surface Mounted on 1 in2 Pad Area, t10 sec.
2.Pulse Test: Pulse Width300µs,Duty Cycle 2%.
Rating
-60
±20
-1.9
-1.2
-7.6
0.83
Unit
V
V
A
A
A
W
Internal Structure
D
G
S
1. *$7E
2. 6285&(
3. '5$,1
SI5618
P-CHANNEL
MOSFET
SOT-23
A
D
3
12
F
E
CB
G
H
J
L
K
DIMENSIONS
DIM
INCHES
MM
MIN MAX MIN MAX
A 0.110 0.120 2.80 3.04
B 0.083 0.104 2.10 2.64
C 0.047 0.055 1.20 1.40
D 0.034 0.041 0.85 1.05
E 0.067 0.083 1.70 2.10
F 0.018 0.024 0.45 0.60
G 0.0004 0.006 0.01 0.15
H 0.035 0.043 0.90 1.10
J 0.003 0.007 0.08 0.18
K 0.012 0.020 0.30 0.51
L 0.007 0.020 0.20 0.50
NOTE
Suggested Solder Pad Layout
0.031
0.800
0.035
0.900
0.079
2.000
inches
mm
0.037
0.950
0.037
0.950
Rev.3-1-06222019
1/4
MCCSEMI.COM



SI5618
Electrical Characteristics @ 25°C (Unless Otherwise Specified)
Parameter
Symbol
Test Conditions
Static Characteristics
Drain-Source Breakdown Voltage
Gate-Source Leakage Current
Zero Gate Voltage Drain Current
Gate-Threshold Voltage(Note 2)
Drain-Source On-Resistance(Note 2)
Diode Forward Voltage(Note 2)
Continuous Body Diode Current
V(BR)DSS
IGSS
IDSS
VGS(th)
RDS(on)
VSD
IS
VGS=0V, ID=-250µA
VDS=0V, VGS =±20V
VDS=-48V, VGS=0V
VDS=VGS, ID=-250µA
VGS=-10V, ID=-1.5A
VGS=-4.5V, ID=-1A
VGS=0V, IS=-1A
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS=-15V,VGS=0V,f=1MHz
VDS=-20V,VGS=-10V,ID=-1.5A
VDS=-15V, VGEN=-10V,
RG=3.3Ω, RL=15Ω,
IDS=-1A
SI5618
Min Typ Max Unit
-60
V
±100
nA
-1
µA
-1
-2
-3
V
125
150
165
200
-0.8
-1.4
V
-1.9
A
580
52
pF
35
9.5
1.52
nC
1.76
17.4
5.4
ns
37.2
2.4
Rev.3-1-06222019
2/4
MCCSEMI.COM





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