P-Channel MOSFET. MCT04P06 Datasheet

MCT04P06 MOSFET. Datasheet pdf. Equivalent

Part MCT04P06
Description P-Channel MOSFET
Feature MCT04P06 Features • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Orde.
Manufacture MCC
Datasheet
Download MCT04P06 Datasheet



MCT04P06
MCT04P06
Features
• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
• Epoxy Meets UL 94 V-0 Flammability Rating
• Moisture Sensitivity Level 1
• Halogen Free Available Upon Request By Adding Suffix "-HF"
P-Channel MOSFET
Maximum Ratings
• Operating Junction Temperature Range : -55°C to +150°C
• Storage Temperature Range: -55°C to +150°C
• Thermal Resistance: 62.5°C/W Junction to Ambient
Parameter
Symbol Rating Unit
Drain-Source Voltage
Gate-Source Volltage
Continuous Drain Current(Note 1)
Pulsed Drain Current (Note 2)
Total Power Dissipation
VDS
-60
V
VGS
±20
V
ID
-3.5
A
IDM
-14
A
PD
2.0
W
Notes: 1.Surface Mounted on FR4 Board Using the Minimum Recommended Pad Size.
2. Pulse Test : Pulse Width300μs, Duty Cycle 2%.
Internal Structure:
D
1.GATE
2.DRAIN
3.SOURCE
4.DRAIN
G
S
SOT-223
A
G
H
D
E
J
4
BC
123
F
K
DIMENSIONS
DIM
INCHES
MM
MIN MAX MIN MAX
A 0.248 0.264 6.30 6.70
B 0.130 0.146 3.30 3.70
C 0.264 0.287 6.70 7.30
D 0.001 0.004 0.02 0.10
E 0.114 0.122 2.90 3.10
F
0.091
2.30
G --- 0.071 --- 1.80
H 0.009 0.014 0.23 0.35
J 0.030 --- 0.75 ---
K 0.026 0.033 0.66 0.84
NOTE
TYP.
Rev.3-1-05302019
1/4
MCCSEMI.COM



MCT04P06
MCT04P06
Electrical Characteristics @ 25°C (Unless Otherwise Specified)
Parameter
Symbol
Test Conditions
Min
Static Characteristics
Drain-Source Breakdown Voltage
V(BR)DSS VGS=0V, ID=-250µA
-60
Gate-Source Leakage Current
IGSS VDS=0V, VGS =±20V
Zero Gate Voltage Drain Current
IDSS
VDS=-60V, VGS=0V
Gate-Threshold Voltage(Note 2)
VGS(th) VDS=VGS, ID=-250µA
-1
Drain-Source On-Resistance(Note 2)
RDS(on)
VGS=-10V, ID=-3.1A
VGS=-4.5V, ID=-0.2A
Diode Forward Voltage
VSD VGS=0V, IS=-2A
Forward Tranconductance(Note2)
gFS
VDS=-15V, ID=-3.1A
Dynamic Characteristics(Note 3)
Input Capacitance
Ciss
Output Capacitance
Coss VDS=-15V,VGS=0V,f=1MHz
Reverse Transfer Capacitance
Crss
Gate Resistance
Rg
f=1MHz
Swithing Characteristics(Note 3,4)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDD=-30V,VGS=-4.5V,ID=-3.1A
VDD =-30V, VGEN=-4.5V, ID=-2.4A
RL=12.5Ω, RG=1Ω
Note 3. Switching Characteristics are Independent of Operating Junction Temperature.
4. Guaranteed by Design, Not Subject to Production Testing.
Typ
-1.5
60
92
8.5
650
95
60
2.2
3.7
Max Unit
V
±100
nA
-1
µA
-3
V
80
100
1.2
V
S
pF
20
Ω
12
nC
45
105
ns
60
45
Rev.3-1-05302019
2/4
MCCSEMI.COM





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