N-Channel MOSFET. MCAC10H03 Datasheet

MCAC10H03 MOSFET. Datasheet pdf. Equivalent

Part MCAC10H03
Description N-Channel MOSFET
Feature MCAC10H03 Features • High Density Cell Desihn for Low RDS(on) • Fully Characterized Avalanche Volta.
Manufacture MCC
Datasheet
Download MCAC10H03 Datasheet



MCAC10H03
MCAC10H03
Features
• High Density Cell Desihn for Low RDS(on)
• Fully Characterized Avalanche Voltage and Current
• Excellent Package for Good Heat Dissipation
• Special Process Technology for High ESD Capability
• Epoxy Meets UL 94 V-0 Flammability Rating
• Moisture Sensitivity Level 1
• Halogen Free Available Upon Request By Adding Suffix "-HF"
• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
Maximum Ratings
• Operating Junction Temperature Range : -55°C to +150°C
• Storage Temperature Range: -55°C to +150°C
• Thermal Resistance: 62.5°C/W Junction to Ambient(Note 1)
Parameter
Drain-Source Voltage
Gate-Source Volltage
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation (Note 1)
Symbol
VDS
VGS
ID
IDM
PD
Rating
30
±20
100
400
2
Unit
V
V
A
A
W
Note: 1.Mounted on a Glass Epoxy Board of 25.4mm x 25.4mm x 0.8mm.
Internal Structure
D
D
D
D
8
7
6
5
1
2
3
4
S
S
S
G
N-CHANNEL
MOSFET
DFN5060-8
.*
(
'
PIN 1
-
)
0
5
4
+
,
1
3
2
DIMENSIONS
DIM
INCHES
MIN MAX
MM
MIN MAX
A 0.035 0.039 0.900 1.000
B
0.010
0.254
C 0.195 0.201 4.944 5.096
D 0.235 0.241 5.974 6.126
E 0.154 0.162 3.910 4.110
F 0.133 0.141 3.375 3.575
G 0.190 0.196 4.824 4.976
H 0.223 0.229 5.674 5.826
K 0.047 0.055 1.190 1.390
J 0.014 0.018 0.350 0.450
L
0.050
1.270
M 0.022 0.028 0.559 0.711
N 0.017 0.023 0.424 0.576
O 0.023 0.029 0.574 0.726
θ 10° 12° 10° 12°
NOTE
TYP.
TYP.
Rev.3-1-01012019
1/4
MCCSEMI.COM



MCAC10H03
Electrical Characteristics @ 25°C (Unless Otherwise Specified)
Parameter
Symbol
Test Conditions
Static Characteristics
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250µA
Gate-Source Leakage Current
IGSS VDS=0V, VGS =±20V
Zero Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0V
Gate-Threshold Voltage(Note 2)
VGS(th) VDS=VGS, ID=250µA
Drain-Source On-Resistance(Note 2)
RDS(on)
VGS=10V, ID=20A
VGS=4.5V, ID=10A
Forward Tranconductance(Note 2)
gFS
VDS=10V, ID=20A
Dynamic Characteristics(Note 3)
Input Capacitance
Output Capacitance
Ciss
Coss
VDS=15V,VGS=0V,f=1MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Gate-Source Charge
Qg
Qgs VDS=15V,VGS=10V,ID=20A
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Turn-On Rise Time
Turn-Off Delay Time
tr
td(off)
VDD=15V, RL=15Ω
VGS=10V,RG=2.5Ω
Turn-Off Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
IS
Pulsed Diode Forward Current
ISM
Body Diode Voltage (Note 2)
VSD IS=10A, VGS=0V
Note 2. Pulse Test : Pulse Width300μs, Duty Cycle 2%.
3. Guaranteed by Design, Not Subject to Production Testing.
MCAC10H03
Min Typ Max Unit
30
V
±100
nA
1
µA
1.2
1.7
2.5
V
1.9
2.5
2.9
3.5
32
S
5000
1135
pF
563
38
9
nC
13
26
24
ns
91
39
100
A
400
1.2
V
Rev.3-1-01012019
2/4
MCCSEMI.COM





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