GaAs MMIC. HMC230MS8 Datasheet

HMC230MS8 MMIC. Datasheet pdf. Equivalent

Part HMC230MS8
Description 4dB LSB GaAs MMIC
Feature ATTENUATORS - SMT 5 5-8 HMC230MS8 / 230MS8E v02.0505 4 dB LSB GaAs MMIC 3-BIT DIGITAL ATTENUATO.
Manufacture Analog Devices
Datasheet
Download HMC230MS8 Datasheet



HMC230MS8
5
5-8
HMC230MS8 / 230MS8E
v02.0505
4 dB LSB GaAs MMIC 3-BIT DIGITAL
ATTENUATOR, 0.75 - 2.0 GHz
Typical Applications
Features
The HMC230MS8 / HMC230MS8E is ideal for:
4 dB LSB Steps to 28 dB
• Cellular
Single Positive Control Per Bit
• PCS, ISM, MMDS
±0.5 dB Typical Bit Error
• WLL Handset
• Base Station Infrastructure
LETE Functional Diagram
Pin - For - Pin Replacement to
AA100-59 Digital Attenuator
General Description
The HMC230MS8 & HMC230MS8E are broadband 3
- bit positive control GaAs IC digital attenuators in 8
lead MSOP surface mount plastic packages. Cover-
ing 0.75 to 2 GHz, the insertion loss is typically less
than 2 dB. The attenuator bit values are 4 (LSB), 8,
and 16 dB for a total attenuation of 28 dB. Accuracy
is excellent at ±0.5 dB typical with an IIP3 of up to
+48 dBm. Three bit control voltage inputs, toggled
between 0 and +3 to +5 volts, are used to select each
attenuation state at less than 50 uA each. A single
Vdd bias of +3 to +5 volts applied through an external
5K Ohm resistor is required.
SO Electrical Specifications,
TA = +25° C, Vdd = +3V to +5V & Vctl = 0/Vdd (Unless Otherwise Stated)
Parameter
Frequency
Min.
Typical
Max.
Units
B Insertion Loss
0.75 - 1.7 GHz
1.7 - 2.0 GHz
1.6
1.8
dB
1.8
2.1
dB
Attenuation Range
0.75 - 2.0 GHz
28
dB
O Return Loss (RF1 & RF2, All Atten. States)
0.75 - 1.7 GHz
10
13
dB
1.7 - 2.0 GHz
13
16
dB
Attenuation Accuracy: (Reference to Insertion Loss)
4, 8, 12, 16, 20 dB States
24, 28 dB States
All Attenuation States
Input Power for 0.1 dB Compression
Input Third Order Intercept
(Two-Tone Input Power = 0 dBm Each)
Switching Characteristics
0.75 - 1.4 GHz
± 0.3 + 3% of Atten. Setting Max
dB
0.75 - 1.4 GHz
± 0.4 + 6% of Atten. Setting Max
dB
1.40 - 2.0 GHz
± 0.3 + 3% of Atten. Setting Max
dB
5V
3V
0.75 - 2.0 GHz
20
19
dBm
dBm
5V
3V
0.75 - 2.0 GHz
46
45
dBm
dBm
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
0.75 - 2.0 GHz
560
ns
600
ns
Information furnisheFd obyr ApnrailocgeD,edviceeslivisebreylie,veadntdo bteoacpcularacteeanod rrdelieabrlse.,Hpowleevaers, eno coFnotrapcritcHe, idtteitlieveMry,icanrdowtoapvleacCe oorrdpeorsr:aAtnioanlo:g Devices, Inc.,
rrlTiiecgrasehpdntseosemnosfaiisbtrhkigislrirtdayannpisdtaeardrtesiegsbsuiysmttheimear2edtpdml0bictyaraayAAtdiorneenlamspluooalhrgtrkofaDrstoheamevRrreicwitetosihsseuaefsopedurr.noi,dtSpsepeCurretscyaheinfo,iyecfnatoplhtrmiaeoftinoer ssrnretasfsnOouopyrberjiprcendadtcfirvtt,ieeentnogMotrecwrmhiOgnAaeehnnrtngsst0s.e-o1olwfif8Ainpthn2aeoatue4lotnagntsPotDotiehwcrveooi.ctwheNnesowr.e:.h9OPAihp7ntopte8inltiT-ecee2:a.c57tcih8o0on1no-m-S33lo2u3g9py4-p4W3o7ra0ty:0F,Pa•Ph.xOoOn:r.de9B:e7o1r x-8o8n9-0l12i0n05-e6A0,aNN-tA3woLr3wOw7wGo3o.-adDn,aMloAg.0c2o0m62-9106



HMC230MS8
v02.0505
HMC230MS8 / 230MS8E
4 dB LSB GaAs IC 3-BIT DIGITAL
ATTENUATOR, 0.75 - 2.0 GHz
Insertion Loss
0
Return Loss RF1, RF2
(Only Major States are Shown)
0
-0.5
+25C
-40C
-1
+85C
-5
16, 28 dB
-1.5
-2
-2.5
E -3
0.75
1
1.25
1.5
1.75
2
FREQUENCY (GHz)
T Normalized Attenuation
(Only Major States are Shown)
0
E -5
-10
L -15
-20
4 dB
8 dB
16 dB
-25
28 dB
O -30
-35
0.75
1
1.25
1.5
1.75
2
FREQUENCY (GHz)
S Bit Error vs. Frequency
(Only Major States are Shown)
B 4
3
2
O 1
-10
4 dB
-15
-20
8 dB
-25
0.75
1
1.25
1.5
1.75
2
FREQUENCY (GHz)
Bit Error vs. Attenuation State
3
2
1
0
0.9 GHz
-1
1.9 GHz
-2
4
8
12
16
20
24
28
ATTENUATION STATE (dB)
Relative Phase vs. Frequency
(Only Major States are Shown)
60
40
20
0
0
-1
4 dB
8 dB
16 dB
-2
28 dB
-3
-20
4 dB
8 dB
16 dB
-40
28 dB
-4
0.75
1
1.25
1.5
1.75
2
FREQUENCY (GHz)
-60
0.75
1
1.25
1.5
1.75
2
FREQUENCY (GHz)
Note: All Data Typical Over Voltage (+3V to +5V) & Temperature (-40 to +85 deg C).
Information furnisheFd obyr ApnrailocgeD,edviceeslivisebreylie,veadntdo bteoacpcularacteeanod rrdelieabrlse.,Hpowleevaers, eno coFnotrapcritcHe, idtteitlieveMry,icanrdowtoapvleacCe oorrdpeorsr:aAtnioanlo:g Devices, Inc.,
rrlTiiecgrasehpdntseosemnosfaiisbtrhkigislrirtdayannpisdtaeardrtesiegsbsuiysmttheimear2edtpdml0bictyaraayAAtdiorneenlamspluooalhrgtrkofaDrstoheamevRrreicwitetosihsseuaefsopedurr.noi,dtSpsepeCurretscyaheinfo,iyecfnatoplhtrmiaeoftinoer ssrnretasfsnOouopyrberjiprcendadtcfirvtt,ieeentnogMotrecwrmhiOgnAaeehnnrtngsst0s.e-o1olwfif8Ainpthn2aeoatue4lotnagntsPotDotiehwcrveooi.ctwheNnesowr.e:.h9OPAihp7ntopte8inltiT-ecee2:a.c57tcih8o0on1no-m-S33lo2u3g9py4-p4W3o7ra0ty:0F,Pa•Ph.xOoOn:r.de9B:e7o1r x-8o8n9-0l12i0n05-e6A0,aNN-tA3woLr3wOw7wGo3o.-adDn,aMloAg.0c2o0m62-9106
5
5-9





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)