POWER AMPLIFIER. HMC415LP3 Datasheet

HMC415LP3 AMPLIFIER. Datasheet pdf. Equivalent

Part HMC415LP3
Description GaAs InGaP HBT MMIC POWER AMPLIFIER
Feature HMC415LP3 / 415LP3E v03.0605 GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz LINEAR & POWER AM.
Manufacture Analog Devices
Datasheet
Download HMC415LP3 Datasheet



HMC415LP3
HMC415LP3 / 415LP3E
v03.0605
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 4.9 - 5.9 GHz
11
11 - 66
Typical Applications
This amplifier is ideal for use as a power
amplifier for 4.9 - 5.9 GHz applications:
• 802.11a WLAN
• HiperLAN WLAN
• Access Points
• UNII & ISM Radios
Functional Diagram
Features
Gain: 20 dB
34% PAE @ Psat = +26 dBm
3.7% EVM @ Pout = +15 dBm
with 54 Mbps OFDM Signal
Supply Voltage: +3V
Power Down Capability
Low External Part Count
General Description
The HMC415LP3 & HMC415LP3E are high effi-
ciency GaAs InGaP Heterojunction Bipolar Tran-
sistor (HBT) MMIC Power amplifiers which operate
between 4.9 and 5.9 GHz. The amplifier is pack-
aged in a low cost, leadless surface mount pack-
age with an exposed base for improved RF and
thermal performance. With a minimum of external
components, the amplifier provides 20 dB of gain,
+26 dBm of saturated power, and 34% PAE from a
+3V supply voltage. Vpd can be used for full power
down or RF output power/current control. For +15
dBm OFDM output power (64 QAM, 54 Mbps), the
HMC415LP3 & HMC415LP3E achieve an error
vector magnitude (EVM) of 3.7% meeting 802.11a
linearity requirements.
Electrical Specifications, TA = +25° C, Vs = 3V, Vpd = 3V
Parameter
Frequency Range
Gain
Min. Typ. Max.
4.9 - 5.1
18
20
Min. Typ. Max. Min. Typ. Max.
5.1 - 5.4
5.4 - 5.9
18.5 20.5
16
19
Units
GHz
dB
Gain Variation Over Temperature
0.04 0.05
0.04 0.05
0.04 0.05 dB / °C
Input Return Loss
Output Return Loss
10
9
8
dB
10
12
8
dB
Output Power for 1dB
Compression (P1dB)
Icq = 285 mA 20
Icq = 200 mA
22.5
22.0
20.5
23.0
22.5
18 21.5
21.0
dBm
Saturated Output Power (Psat)
25.5
Output Third Order Intercept (IP3)
28
31
Error Vector Magnitude
Icq = 200 mA
(54 Mbps OFDM Signal @ +15 dBm Pout)
Noise Figure
6
Supply Current (Icq)
Vpd = 0V/3V
0.002 /
285
Control Current (Ipd)
Vpd = 3V
7
Switching Speed
tOn, tOff
45
26
29
32
3.7
6
0.002 /
285
7
45
24
27
30
6
0.002 /
285
7
45
dBm
dBm
%
dB
mA
mA
ns
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HMC415LP3
HMC415* PRODUCT PAGE QUICK LINKS
Last Content Update: 02/23/2017
COMPARABLE PARTS
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EVALUATION KITS
HMC415LP3 Evaluation Board
DOCUMENTATION
Application Notes
AN-1363: Meeting Biasing Requirements of Externally
Biased RF/Microwave Amplifiers with Active Bias
Controllers
Broadband Biasing of Amplifiers General Application Note
MMIC Amplifier Biasing Procedure Application Note
Thermal Management for Surface Mount Components
General Application Note
Data Sheet
HMC415 Data Sheet
TOOLS AND SIMULATIONS
HMC415 S-Parameter
REFERENCE MATERIALS
Quality Documentation
Package/Assembly Qualification Test Report: 16L 3x3mm
QFN Package (QTR: 11003 REV: 02)
Package/Assembly Qualification Test Report: LP2, LP2C,
LP3, LP3B, LP3C, LP3D, LP3F, LP3G (QTR: 2014-0364)
Package/Assembly Qualification Test Report: Plastic
Encapsulated QFN (QTR: 05006 REV: 02)
Semiconductor Qualification Test Report: GaAs HBT-B
(QTR: 2013-00229)
DESIGN RESOURCES
HMC415 Material Declaration
PCN-PDN Information
Quality And Reliability
Symbols and Footprints
DISCUSSIONS
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