InGaP HBT. HMC453QS16G Datasheet

HMC453QS16G HBT. Datasheet pdf. Equivalent

Part HMC453QS16G
Description InGaP HBT
Feature HMC453QS16G / 453QS16GE v01.0205 InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz LINEAR & POWER.
Manufacture Analog Devices
Datasheet
Download HMC453QS16G Datasheet



HMC453QS16G
HMC453QS16G / 453QS16GE
v01.0205
InGaP HBT 1.6 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
11
11 - 178
Typical Applications
The HMC453QS16G / HMC453QS16GE is ideal for
applications requiring a high dynamic range amplifier:
• GSM, GPRS & EDGE
• CDMA & W-CDMA
• CATV/Cable Modem
• Fixed Wireless & WLL
Functional Diagram
Features
Output IP3: +51 dBm
21.5 dB Gain @ 400 MHz
8 dB Gain @ 2100 MHz
45% PAE @ +32 dBm Pout
+25 dBm CDMA2000 Channel Power@ -45 dBc ACP
Single +5V Supply
Integrated Power Control (VPD)
QSOP16G SMT Package: 29.4 mm2
General Description
The HMC453QS16G & HMC453QS16GE are high
dynamic range GaAs InGaP Heterojunction Bipo-
lar Transistor (HBT) 1.6 watt MMIC power amplifiers
operating between 0.4 and 2.2 GHz. Packaged in a
miniature 16 lead QSOP plastic package, the amp-
lifier gain is typically 21.5 dB at 0.4 GHz and 8 dB
at 2.1 GHz. Utilizing a minimum number of external
components and a single +5V supply, the amplifier
output IP3 can be optimized to +47 dBm at 0.4 GHz
or +51 dBm at 2.1 GHz. The power control (VPD)
can be used for full power down or RF output power/
current control. The high output IP3 and PAE
make the HMC453QS16G(E) ideal power amplifiers
for Cellular/PCS/3G, WLL, ISM and Fixed Wireless
applications.
Electrical Specifications, TA = +25°C, Vs= +5V, VPD = +5V [1]
Parameter
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range
400 - 410
450 - 496
810 - 960
1710 - 1990
2010 - 2170
MHz
Gain
19 21.5
18 20.5
12 15
6
9
6
8
dB
Gain Variation Over
Temperature
0.012 0.02
0.012 0.02
0.012 0.02
0.012 0.02
dB /
0.012 0.02
°C
Input Return Loss
12
15
12
10
15
dB
Output Return Loss
10
10
15
13
18
dB
Output Power for 1dB
29 32
Compression (P1dB)
29 32
29 32
28.5 31.5
30 33
dBm
Saturated Output
Power (Psat)
32.25
32.25
32.5
32
33.5
dBm
Output Third Order
Intercept (IP3) [2]
44 47
47 50
46 49
44 50
48 51
dBm
Noise Figure
7
8.5
7
7.5
6.5
dB
Supply Current (Icq)
725
725
725
725
725
mA
Control Current (IPD)
12
12
12
12
12
mA
[1] Specifications and data reflect HMC453QS16G measured using the respective application circuits for each designated frequency band found
herein. Contact the HMC Applications Group for assistance in optimizing performance for your application.
[2] Two-tone input power of -10 dBm per tone, 1 MHz spacing.
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Order On-line Trademarks and registered trademarks are the property of their respective owners. at www.hAiptptilticea.tcioonmSupport: Phone: 1-800-ANALOG-D



HMC453QS16G
v01.0205
HMC453QS16G / 453QS16GE
InGaP HBT 1.6 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Broadband Gain
& Return Loss @ 400 MHz
25
20
15
10
S21
S11
5
S22
0
-5
-10
-15
0.1
0.2
0.3
0.4
0.5
0.6
0.7
FREQUENCY (GHz)
Input Return Loss
vs. Temperature @ 400 MHz
0
+25 C
-5
+85 C
-40 C
-10
-15
0.35
0.37
0.39
0.41
0.43
0.45
FREQUENCY (GHz)
Gain vs. Temperature @ 400 MHz
24
23
22
21
20
19
18
17
16
15
14
13
12
0.35
+25 C
+85 C
-40 C
0.37
0.39
0.41
0.43
FREQUENCY (GHz)
0.45
Output Return Loss
vs. Temperature @ 400 MHz
0
-5
-10
-15
-20
0.35
+25 C
+85 C
-40 C
0.37
0.39
0.41
0.43
FREQUENCY (GHz)
0.45
11
P1dB vs. Temperature @ 400 MHz
34
33
32
31
30
29
+25 C
28
+85 C
27
-40 C
26
25
24
0.35
0.37
0.39
0.41
0.43
0.45
FREQUENCY (GHz)
Psat vs. Temperature @ 400 MHz
34
33
32
31
30
29
28
27
26
25
24
0.35
+25 C
+85 C
-40 C
0.37
0.39
0.41
0.43
FREQUENCY (GHz)
0.45
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Order On-line Trademarks and registered trademarks are the property of their respective owners. at www.hAiptptilticea.tcioonmSupport: Phone: 1-800-ANALOG-D
11 - 179





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