SPDT SWITCH. HMC545E Datasheet

HMC545E SWITCH. Datasheet pdf. Equivalent

Part HMC545E
Description GaAs MMIC SPDT SWITCH
Feature v00.0905 HMC545 / 545E GaAs MMIC SPDT SWITCH, DC - 3 GHz 10 Typical Applications The HMC545 / HMC.
Manufacture Analog Devices
Datasheet
Download HMC545E Datasheet



HMC545E
v00.0905
HMC545 / 545E
GaAs MMIC SPDT
SWITCH, DC - 3 GHz
10
Typical Applications
The HMC545 / HMC545E is ideal for:
• Cellular/3G Infrastructure
• Private Mobile Radio Handsets
• WLAN, WiMAX & WiBro
• Automotive Telematics
• Test Equipment
Functional Diagram
Features
Low Insertion Loss: 0.25 dB
High Input IP3: +65 dBm
Low DC Power Consumption
Positive Control: 0/+3V to 0/+8V
Ultra Small Package: SOT26
General Description
The HMC545 and HMC545E are low-cost SPDT
switches in 6-lead SOT26 plastic packages for use
in general switching applications which require
very low insertion loss and very small size. With
0.25 dB typical loss, these devices can control sig-
nals from DC to 3.0 GHz and are especially suited
for IF and RF applications including Cellular/3G,
ISM, automotive and portables. The design provides
exceptional insertion loss performance, ideal for filter
and receiver switching. RF1 and RF2 are reflective
shorts when “Off”. The two control voltages require a
minimal amount of DC current and offer compatibility
with CMOS and some TTL logic families.
10 - 306
Electrical Specifications
TA = +25° C, Vctl = 0/+5 Vdc (Unless Otherwise Stated), 50 Ohm System
Parameter
Frequency
Min.
Typ.
Insertion Loss
DC - 1.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
0.25
0.3
0.4
Isolation
DC - 2.2 GHz
DC - 2.5 GHz
DC - 3.0 GHz
26
31
22
27
20
24
Return Loss
DC - 1.0 GHz
25
DC - 2.0 GHz
21
DC - 2.5 GHz
19
DC - 3.0 GHz
17
Input Power for 1 dB Compression
Vctl = 0/+3V
Vctl = 0/+5V
Vctl = 0/+8V
0.5 - 3.0 GHz
23
27
29
33
32
36
Vctl = 0/+3V
45
Input Third Order Intercept
(Two-tone Input Power = +17 dBm Each Tone)
Vctl = 0/+5V
Vctl = 0/+8V
0.5 - 3.0 GHz
65
65
Switching Characteristics
DC - 3.0 GHz
tRISE, tFALL (10/90% RF)
70
tON, tOFF (50% CTL to 10/90% RF)
90
Max.
0.4
0.5
0.7
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
ns
ns
Information furnisheFd obyr ApnrailocgeD,edviceeslivisebreylie,veadntdo bteoacpcularacteeanod rrdelieabrlse.,Hpowleevaers, eno coFnotrapcritcHe, idtteitlieveMry,icanrdowtoapvleacCe oorrdpeorsr:aAtnioanlo:g Devices, Inc.,
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HMC545E
v00.0905
Insertion Loss
0
-0.5
-1
+25 C
-1.5
+85 C
-40 C
-2
0 0.5 1 1.5 2 2.5 3 3.5 4
FREQUENCY (GHz)
Isolation Between
Ports RFC and RF1/RF2
0
-5
-10
RF1
RF2
-15
-20
-25
-30
-35
-40
-45
0 0.5 1 1.5 2 2.5 3 3.5 4
FREQUENCY (GHz)
Input P0.1dB vs. Vctl
40
35
30
25
20
15
+3V
+5V
10
+8V
5
0
0
0.5
1
1.5
2
2.5
3
FREQUENCY (GHz)
HMC545 / 545E
GaAs MMIC SPDT
SWITCH, DC - 3 GHz
Return Loss
0
-5
-10
-15
-20
-25
-30
RFC
RF1, RF2 ON
-35
-40
0 0.5 1 1.5 2 2.5 3 3.5 4
FREQUENCY (GHz)
Isolation Between Ports RF1 and RF2
0
-5
-10
RF1 ON
RF2 ON
-15
-20
-25
-30
-35
-40
-45
0 0.5 1 1.5 2 2.5 3 3.5 4
FREQUENCY (GHz)
Input P1dB vs. Vctl
40
35
30
25
20
15
+3V
+5V
10
+8V
5
0
0
0.5
1
1.5
2
2.5
3
FREQUENCY (GHz)
10
Information furnisheFd obyr ApnrailocgeD,edviceeslivisebreylie,veadntdo bteoacpcularacteeanod rrdelieabrlse.,Hpowleevaers, eno coFnotrapcritcHe, idtteitlieveMry,icanrdowtoapvleacCe oorrdpeorsr:aAtnioanlo:g Devices, Inc.,
rrlTiiecgrasehpdntseosemnosfaiisbtrhkigislrirtdayannpisdtaeardrtesiegsbsuiysmttheimear2edtpdml0bictyaraayAAtdiorneenlamspluooalhrgtrkofaDrstoheamevRrreicwitetosihsseuaefsopedurr.noi,dtSpsepeCurretscyaheinfo,iyecfnatoplhtrmiaeoftinoer ssrnretasfsnOouopyrberjiprcendadtcfirvtt,ieeentnogMotrecwrmhiOgnAaeehnnrtngsst0s.e-o1olwfif8Ainpthn2aeoatue4lotnagntsPotDotiehwcrveooi.ctwheNnesowr.e:.h9OPAihp7ntopte8inltiT-ecee2:a.c57tcih8o0on1no-m-S33lo2u3g9py4-p4W3o7ra0ty:0F,Pa•Ph.xOoOn:r.de9B:e7o1r x-8o8n9-0l12i0n05-e6A0,aNN-tA3woLr3wOw7wGo3o.-adDn,aMloAg.0c2o0m62-9106
10 - 307





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