PHEMT MMIC. HMC669LP3 Datasheet

HMC669LP3 MMIC. Datasheet pdf. Equivalent

Part HMC669LP3
Description GaAs PHEMT MMIC
Feature Amplifiers - Low Noise - SMT 7 7-1 HMC669LP3 / 669LP3E v04.0709 GaAs PHEMT MMIC LNA w/ FAILSAFE.
Manufacture Analog Devices
Datasheet
Download HMC669LP3 Datasheet



HMC669LP3
7
7-1
HMC669LP3 / 669LP3E
v04.0709
GaAs PHEMT MMIC LNA w/
FAILSAFE BYPASS MODE, 1700 - 2200 MHz
Typical Applications
Features
The HMC669LP3(E) is ideal for:
Noise Figure: 1.4 dB
• Cellular/3G and LTE/WiMAX/4G
Output IP3: +29 dBm
• BTS & Infrastructure
Gain: 17 dB
• Repeaters and Femtocells
Failsafe Operation:
• Tower Mounted Amplifiers
• Test & Measurement Equipment
LETE Functional Diagram
Bypass is enabled when LNA is unpowered
Single Supply: +3V or +5V
16 Lead 3x3mm QFN Package: 9 mm2
General Description
The HMC669LP3(E) is a versatile, high dynamic range
GaAs MMIC Low Noise Amplifier that integrates a
low loss LNA bypass mode on the IC. The amplifier
is ideal for receivers and LNA modules operating be-
tween 1.7 and 2.2 GHz and provides 1.4 dB noise
figure, 17 dB of gain and +29 dBm IP3 from a single
supply of +5V @ 86mA. Input and output return losses
are excellent and no external matching components
are required. A single control line is used to switch
between LNA mode and a low loss bypass mode.
Failsafe topology also enables the LNA bidirectional
bypass path when no DC power is available.
SO Electrical Specifications, TA = +25° C, Rbias = 15 Ohm
Parameter
LNA Mode
Vdd = +3V
Vdd = +5V
Bypass Mode
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
B Frequency Range
1.7 - 2.2
1.7 - 2.2
1.7 - 2.2
Gain
12
15
14
17
-3
-2.1
Gain Variation Over Temperature
0.015
0.014
0.0008
O Noise Figure
1.4 1.65
1.4 1.65
Failsafe Mode
Min. Typ. Max.
1.7 - 2.2
-3
-2.1
0.0008
Units
GHz
dB
dB / °C
dB
Input Return Loss
10
11
12
12
dB
Output Return Loss
13
13
12
12
dB
Reverse Isolation
28
30
-
-
dB
Power for 1dB Compression
(P1dB)[1]
11.5
12
21
24
dBm
Third Order Intercept (IP3)[2]
25
29
25
25
dBm
Supply Current (Idd)
49
59
86
105
0.04
-
mA
Switching Speed
LNA Mode to Bypass Mode
80
Bypass Mode to LNA Mode
100
100
-
ns
ns
[1] P1dB for LNA Mode is referenced to RFOUT while P1dB for Bypass and Failsafe Modes are referenced to RFIN.
[2] IP3 for LNA Mode is referenced to RFOUT while IP3 for Bypass and Failsafe Modes are referenced to RFIN.
IrrliniecgfseohFpntrsomsoenoasrftiisibtohpingilrirrtdyafiuncpirstnaeeairdsts,ihesbesduydmtehimebaldtypivmlbiAcPeyaanyAhtariorlynooenagslnauoolDrgetneofD:rdvtoheim9cevteri7cwoistes8issiuspe-fso2lbeura.ne5idtSlcis0eepevure-esca3deoinf,i3yctnroadop4triaboe3ftenoersrnastascn:oucyrbuHFjipernaaacfirtttteiexnttnoig:attecner9mhdiga7ehMnrnte8gstlseii-aoco2bwffrlAie5ptohn.a0oawtHuelo-tonag3wntsvoDe3otveiecr7eveori3C,.ctheNnesooor. rpOFOPoorhrndraoenetpTierroei:ccnO7eh8,,nn12od--30lleoi2lngiA9veye-l4rWpay7h,at0yaa0w,n•PRdw.OOowtor.ad.Bdephorl,iaxtocCtn9ietl1hein0oe.e6rcld,maoeNtmrswosf:rwowArwondo.aa,dlno,MagMloAADge.00cv21oic0m8e62s24,-9In10c.6,
Trademarks and registered trademarks aArepthpelpircopaetrityoonf thSeiur rpesppeoctrivte: oPwhneorsn. e: 978-250-33A4p3plicoartioanpSpusp@pohrti:tPtihteo.nceo: 1m-800-ANALOG-D



HMC669LP3
HMC669LP3 / 669LP3E
v04.0709
GaAs PHEMT MMIC LNA w/
FAILSAFE BYPASS MODE, 1700 - 2200 MHz
7
LNA - Broadband Gain & Return Loss
LNA - Gain vs. Temperature [1]
25
22
20
15
S21
20
10
5
Vdd=5V
18
0
Vdd=3V
S22
-5
-10
-15
S11
-20
-25
-30
E 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3
FREQUENCY (GHz)
T LNA - Gain vs. Temperature [2]
22
E 20
+25C
+85C
-40C
18
L 16
14
O 12
10
1.6
1.7
1.8
1.9
2
2.1
2.2
2.3
FREQUENCY (GHz)
BS LNA - Noise Figure vs. Temperature [3]
2
+85C
1.8
+25C
O 1.6
16
14
+25C
+85C
12
-40C
10
1.6
1.7
1.8
1.9
2
2.1
2.2
2.3
FREQUENCY (GHz)
LNA - Return Loss vs. Temperature [1]
0
-5
Input Return Loss
-10
-15
Output Return Loss
-20
+25C
-25
+85C
-40C
-30
1.6 1.7 1.8 1.9
2
2.1 2.2 2.3
FREQUENCY (GHz)
LNA - Output IP3 vs.
Temperature, Output Power @ 0 dBm
34
Vdd=5V
30
1.4
26
1.2
1
22
0.8
-40C
0.6
Vdd=5V
Vdd=3V
18
Vdd=3V
+25C
+85C
-40C
0.4
1.6
1.7
1.8
1.9
2
2.1
2.2
2.3
FREQUENCY (GHz)
14
1.6
1.7
1.8
1.9
2
2.1
2.2
2.3
FREQUENCY (GHz)
[1] Vdd = 5V [2] Vdd = 3V [3] Measurement reference plane shown on evaluation PCB drawing.
IrrliniecgfseohFpntrsomsoenoasrftiisibtohpingilrirrtdyafiuncpirstnaeeairdsts,ihesbesduydmtehimebaldtypivmlbiAcPeyaanyAhtariorlynooenagslnauoolDrgetneofD:rdvtoheim9cevteri7cwoistes8issiuspe-fso2lbeura.ne5idtSlcis0eepevure-esca3deoinf,i3yctnroadop4triaboe3ftenoersrnastascn:oucyrbuHFjipernaaacfirtttteiexnttnoig:attecner9mhdiga7ehMnrnte8gstlseii-aoco2bwffrlAie5ptohn.a0oawtHuelo-tonag3wntsvoDe3otveiecr7eveori3C,.ctheNnesooor. rpOFOPoorhrndraoenetpTierroei:ccnO7eh8,,nn12od--30lleoi2lngiA9veye-l4rWpay7h,at0yaa0w,n•PRdw.OOowtor.ad.Bdephorl,iaxtocCtn9ietl1hein0oe.e6rcld,maoeNtmrswosf:rwowArwondo.aa,dlno,MagMloAADge.00cv21oic0m8e62s24,-9In10c.6,
Trademarks and registered trademarks aArepthpelpircopaetrityoonf thSeiur rpesppeoctrivte: oPwhneorsn. e: 978-250-33A4p3plicoartioanpSpusp@pohrti:tPtihteo.nceo: 1m-800-ANALOG-D
7-2





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)