PHEMT MMIC. HMC715LP3E Datasheet

HMC715LP3E MMIC. Datasheet pdf. Equivalent

Part HMC715LP3E
Description GaAs PHEMT MMIC
Feature Amplifiers - Low Noise - SMT 7 7-1 HMC715LP3 / 715LP3E v01.0808 GaAs PHEMT MMIC LOW NOISE AMPLIF.
Manufacture Analog Devices
Datasheet
Download HMC715LP3E Datasheet



HMC715LP3E
7
7-1
HMC715LP3 / 715LP3E
v01.0808
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.1 - 2.9 GHz
Typical Applications
Features
The HMC715LP3(E) is ideal for:
Noise Figure: 0.9 dB
• Cellular/3G and LTE/WiMAX/4G
Gain: 19 dB
• BTS & Infrastructure
Output IP3: +33 dBm
• Repeaters and Femtocells
Single Supply: +3V to +5V
• Public Safety Radio
• Access Points
LETE Functional Diagram
16 Lead 3x3mm QFN Package: 9 mm2
General Description
The HMC715LP3(E) is a GaAs PHEMT MMIC
Low Noise Amplifier that is ideal for Cellular/3G and
LTE/WiMAX/4G basestation front-end receivers
operating between 2.1 and 2.9 GHz. The amplifier
has been optimized to provide 0.9 dB noise figure,
19 dB gain and +33 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent and the LNA requires minimal external
matching and bias decoupling components. The
HMC715LP3(E) can be biased with +3V to +5V and
features an externally adjustable supply current
which allows the designer to tailor the linearity
performance of the LNA for each application.
SO Electrical Specifications
B TA = +25° C, Rbias = 2k Ohms for Vdd = +5V, Rbias = 47k Ohms for Vdd = +3V [1]
Parameter
Vdd = +3V
Vdd = +5V
Units
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
O Frequency Range
2.1 - 2.9
2.3 - 2.7
2.1 - 2.9
2.3 - 2.7
MHz
Gain
14.5 18
15
18
15.5 19
16.5 19
dB
Gain Variation Over Temperature
0.01
0.01
0.01
0.01
dB/ °C
Noise Figure
0.9 1.2
0.9 1.2
0.9 1.2
0.9 1.2
dB
Input Return Loss
11.5
11
11.5
11
dB
Output Return Loss
14
13.5
12.5
12
dB
Output Power for 1 dB
Compression (P1dB)
10.5 14.5
12.5 15
15
19
16.5 19.5
dBm
Saturated Output Power (Psat)
16
16.5
20
20.5
dBm
Output Third Order Intercept (IP3)
28
28.5
33
33.5
dBm
Supply Current (Idd)
47
65
47
65
95 126
95 126 mA
[1] Rbias resistor sets current, see application circuit herein
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Trademarks and registered trademarks aArepthpelpircopaetrityoonf thSeiur rpesppeoctrivte: oPwhneorsn. e: 978-250-33A4p3plicoartioanpSpusp@pohrti:tPtihteo.nceo: 1m-800-ANALOG-D



HMC715LP3E
HMC715LP3 / 715LP3E
v01.0808
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2.1 - 2.9 GHz
7
Broadband Gain & Return Loss [1] [2]
Gain vs. Temperature [1]
30
26
24
18
S21
24
12
22
6
0
S11
S22
-6
-12
-18
5V
-24
3V
-30
E 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
FREQUENCY (GHz)
T Gain vs. Temperature [2]
26
E 24
+25C
+85C
22
-40C
L 20
18
16
O 14
12
2
2.2
2.4
2.6
2.8
3
FREQUENCY (GHz)
BS Output Return Loss vs. Temperature [1]
0
O -5
+25C
+85C
20
18
16
+25C
+85C
-40C
14
12
2
2.2
2.4
2.6
2.8
3
FREQUENCY (GHz)
Input Return Loss vs. Temperature [1]
0
-5
+25C
+85C
-40C
-10
-15
-20
2
2.2
2.4
2.6
2.8
3
FREQUENCY (GHz)
Reverse Isolation vs. Temperature [1]
-20
-25
-40C
-30
-10
-35
-40
+25C
+85C
-15
-40C
-45
-20
2
2.2
2.4
2.6
2.8
3
FREQUENCY (GHz)
-50
2
2.2
2.4
2.6
2.8
3
FREQUENCY (GHz)
[1] Vdd = 5V, Rbias = 2kΩ [2] Vdd = 3V, Rbias = 47kΩ
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Trademarks and registered trademarks aArepthpelpircopaetrityoonf thSeiur rpesppeoctrivte: oPwhneorsn. e: 978-250-33A4p3plicoartioanpSpusp@pohrti:tPtihteo.nceo: 1m-800-ANALOG-D
7-2





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