PHEMT MMIC. HMC718LP4E Datasheet

HMC718LP4E MMIC. Datasheet pdf. Equivalent

Part HMC718LP4E
Description GaAs PHEMT MMIC
Feature Amplifiers - Low Noise - SMT 7 7-1 HMC718LP4 / 718LP4E v01.1008 GaAs PHEMT MMIC HIGH IP3 LOW NOI.
Manufacture Analog Devices
Datasheet
Download HMC718LP4E Datasheet



HMC718LP4E
7
7-1
HMC718LP4 / 718LP4E
v01.1008
GaAs PHEMT MMIC HIGH IP3
LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz
Typical Applications
Features
The HMC718LP4(E) is ideal for:
Noise Figure: 0.9 dB
• Cellular/3G and LTE/WiMAX/4G
Gain: 32 dB
• BTS & Infrastructure
Output IP3: +40 dBm
• Repeaters and Femtocells
Single Supply: +3V to +5V
• Access Points
• Test Equipment
OLETE Functional Diagram
50 Ohm Matched Input/Output
24 Lead 4x4 mm SMT Package: 16 mm2
General Description
The HMC718LP4(E) is a GaAs PHEMT MMIC
Low Noise Amplifier that is ideal for Cellular/3G and
LTE/WiMAX/4G basestation front-end receivers
operating between 600 and 1400 MHz. The amplifier
has been optimized to provide 0.9 dB noise figure,
32 dB gain and +40 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent and the LNA requires minimal external
matching and bias decoupling components. The
HMC718LP4(E) shares the same package and
pinout with the HMC719LP3(E) 1.3 - 2.9 GHz LNA.
The HMC718LP4(E) can be biased with +3V to +5V
and features an externally adjustable supply current
which allows the designer to tailor the linearity
performance of the LNA for each application.
S Electrical Specifications, TA = +25°C, Rbias = 3.92k Ohms*
B Parameter
O Frequency Range
Vdd = +3V
Min. Typ. Max. Min. Typ. Max.
0.6 - 1.0
1.0 - 1.4
Vdd = +5V
Min. Typ. Max. Min. Typ. Max.
0.6 - 1.0
1.0 - 1.4
Units
GHz
Gain
26 30.5
25 27.5
27
32
25
29
dB
Gain Variation Over Temperature
0.01
0.01
0.01
0.01
dB/ °C
Noise Figure
0.95
0.75
0.95
0.8
dB
Input Return Loss
15
20
15.5
23
dB
Output Return Loss
13
10
15.5
13
dB
Output Power for 1 dB
Compression (P1dB)
13 15.5
13 15.7
19 21.5
19 21.5
dBm
Saturated Output Power (Psat)
19
19
23.5
23.3
dBm
Output Third Order Intercept (IP3)
35
34.5
40.5
40
dBm
Supply Current (Idd)
187 200
187 200
254 281
254 281 mA
* Rbias resistor sets current, see application circuit herein
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HMC718LP4E
HMC718LP4 / 718LP4E
v01.1008
GaAs PHEMT MMIC HIGH IP3
LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz
7
Broadband Gain & Return Loss [1] [2]
Gain vs. Temperature [1]
40
40
S21
30
20
35
10
Vdd=5V
Vdd=3V
+25C
+85C
-40C
0
-10
-20
-30 S22
S11
-40
E 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
FREQUENCY (GHz)
T Gain vs. Temperature [2]
40
E 35
+25C
+85C
-40C
L 30
25
O 20
0.5
0.7
0.9
1.1
1.3
1.5
FREQUENCY (GHz)
BS Output Return Loss vs. Temperature [1]
0
-5
+25C
+85C
O-40C
30
25
20
0.5
0.7
0.9
1.1
1.3
1.5
FREQUENCY (GHz)
Input Return Loss vs. Temperature [1]
0
-10
-20
-30
-40
+25C
+85C
-40C
-50
0.5
0.7
0.9
1.1
1.3
1.5
FREQUENCY (GHz)
Reverse Isolation vs. Temperature [1]
0
-10
-20
+25C
+85C
-10
-40C
-30
-15
-40
-20
-50
-25
0.5
0.7
0.9
1.1
1.3
1.5
FREQUENCY (GHz)
-60
0.5
0.7
0.9
1.1
1.3
1.5
FREQUENCY (GHz)
[1] Vdd = 5V, Rbias = 3.92K [2] Vdd = 3V, Rbias = 3.92K
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license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
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