T/R SWITCH. HMC784MS8GE Datasheet

HMC784MS8GE SWITCH. Datasheet pdf. Equivalent

Part HMC784MS8GE
Description GaAs MMIC 10WATT T/R SWITCH
Feature v00.0808 HMC784MS8GE GaAs MMIC 10 WATT T/R SWITCH DC - 4 GHz SWITCHES - SPDT - SMT 11 11 - 224 T.
Manufacture Analog Devices
Datasheet
Download HMC784MS8GE Datasheet



HMC784MS8GE
v00.0808
HMC784MS8GE
GaAs MMIC 10 WATT T/R SWITCH
DC - 4 GHz
11
11 - 224
Typical Applications
Features
The HMC784MS8GE is ideal for:
Input P1dB: +40 dBm @ Vdd = +8V
• Cellular / 4G Infrastructure
High Third Order Intercept: +62 dBm
• WiMAX, WiBro & Fixed Wireless
Positive Control: +3 to +8 V
• Automotive Telematics
Low Insertion Loss: 0.4 dB
• Mobile Radio
• Test Equipment
LETE Functional Diagram
MSOP8G Package: 14.8 mm2
General Description
The HMC784MS8GE is a high power SPDT switch in
an 8-lead MSOPG package for use in transmit-rece-
ive applications which require very low distortion at
high input signal power levels. The device can con-
trol signals from DC to 4 GHz. The design provides
exceptional intermodulation performance; > +60 dBm
third order intercept at +5V bias. RF1 and RF2 are
reflective shorts when “OFF”. On-chip circuitry allows
single positive supply operation from +3 Vdc to +8 Vdc
at very low DC current with control inputs compatible
with CMOS and most TTL logic families.
O Electrical Specifications,
TA = +25° C, Vctl = 0/Vdd, Vdd = +5V (Unless Otherwise Stated), 50 Ohm System
Parameter
Frequency
Min.
Typ. Max.
S Insertion Loss
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
DC - 3.0 GHz
DC - 4.0 GHz
0.4
0.6
0.6
0.8
0.8
1.1
0.9
1.3
1.3
2.0
B Isolation
DC - 4.0 GHz
26
30
O Return Loss (On State)
DC - 1.0 GHz
35
DC - 2.0 GHz
30
DC - 3.0 GHz
20
Units
dB
dB
dB
dB
dB
dB
dB
dB
dB
DC - 4.0 GHz
10
dB
Input Power for 0.1dB Compression
Vdd = +3V
Vdd = +5V
Vdd = +8V
0.1 - 4.0 GHz
32
dBm
37
dBm
38
dBm
Input Power for 1dB Compression
Vdd = +3V
32
35
Vdd = +5V 0.1 - 4.0 GHz
35
38
Vdd = +8V
38
41
dBm
dBm
dBm
Input Third Order Intercept
(Two-tone input power = +30 dBm each tone)
0.02 - 0.1 GHz
0.1 - 2.0 GHz
0.1 - 3.0 GHz
0.1 - 4.0 GHz
42
dBm
62
dBm
61
dBm
60
dBm
Switching Characteristics
tRISE, tFALL (10/90% RF) DC - 4.0 GHz
15
ns
tON, tOFF (50% CTL to 10/90% RF)
40
ns
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HMC784MS8GE
v00.0808
HMC784MS8GE
GaAs MMIC 10 WATT T/R SWITCH
DC - 4 GHz
Insertion Loss vs. Temperature
0
Isolation
0
-1
-10
RF1
RF2
+25 C
-2
+85 C
-20
-40 C
-3
-4
-5
E 0
1
2
3
4
5
6
FREQUENCY (GHz)
T Insertion Loss vs. Vdd
0
E -1
L -2
+3V
-3
+5V
+8V
O -4
-5
0
1
2
3
4
5
6
S FREQUENCY (GHz)
B Return Loss
0
O -10
-30
-40
-50
0
1
2
3
4
5
FREQUENCY (GHz)
Isolation vs. Vdd
0
-10
+3V
+5V
+8V
-20
-30
-40
-50
0
1
2
3
4
5
FREQUENCY (GHz)
RF1 to RF2 Isolation
0
-10
RF1 ON RF2 OFF
RF1 OFF RF2 ON
6
6
-20
-20
-30
-30
-40
INPUT RETURN LOSS
OUTPUT RETURN LOSS
-50
-40
-60
0
1
2
3
4
5
6
FREQUENCY (GHz)
-50
0
1
2
3
4
5
6
FREQUENCY (GHz)
11
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Order On-line Trademarks and registered trademarks are the property of their respective owners. at www.hAitptiptleic.actioomn Support: Phone: 1-800-ANALOG-D
11 - 225





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