pHEMT MMIC. HMC995LP5GE Datasheet

HMC995LP5GE MMIC. Datasheet pdf. Equivalent

Part HMC995LP5GE
Description GaAs pHEMT MMIC
Feature HMC995LP5GE V02.1112 GaAs pHEMT MMIC 3 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12 - 16 GHz Am.
Manufacture Analog Devices
Datasheet
Download HMC995LP5GE Datasheet



HMC995LP5GE
HMC995LP5GE
V02.1112
GaAs pHEMT MMIC 3 WATT POWER AMPLIFIER SMT
WITH POWER DETECTOR, 12 - 16 GHz
Typical Applications
Features
The HMC995LP5GE is ideal for:
Intergrated Power Detector
• Point-to-Point Radios
Saturated Output Power: 35.5 dBm @ 24% PAE
• Point-to-Multi-Point Radios
High Output IP3: 41 dBm
• VSAT & SATCOM
High Gain: 27 dB
• Military & Space
OLETE Functional Diagram
DC Supply: +5V to +7V @ 1200 mA
No External Matching Required
General Description
The HMC995LP5GE is a 4 stage GaAs pHEMT MMIC
2 Watt Power Amplifier with an integrated temperature
compensated on-chip power detector which operates
between 12 and 16 GHz. The HMC995LP5GE provides
27 dB of gain, 35.5 dBm of saturated output power,
and 24% PAE from a +7V supply. The HMC995LP5GE
exhibits excellent linearity and is optimized for high
capacity digital microwave radio. It is also ideal for
13.75 to 14.5 GHz Ku Band VSAT transmitters as
well as SATCOM applications. The HMC995LP5GE
amplifier I/Os are internally matched to 50 Ohms
and is packaged in a leadless QFN 5x5 mm surface
mount package and requires no external matching
components.
S Electrical Specifications
B TA = +25° C, Vdd = Vdd1 = Vdd2 = Vdd3 = Vdd4 = Vdd5 = +7V, Idd = 1200 mA [1]
Parameter
Min.
Typ.
Max.
Units
Frequency Range
12 - 16
GHz
O Gain [3]
24
27
dB
Gain Variation Over Temperature
0.03
dB/ °C
Input Return Loss
9
dB
Output Return Loss
15
dB
Output Power for 1 dB Compression (P1dB)
32
34.5
dBm
Saturated Output Power (Psat)
35.5
dBm
Output Third Order Intercept (IP3)[2]
41
dBm
Total Supply Current (Idd)
1200
mA
[1] Adjust (Vgg1=Vgg2=Vgg3) between -2 to 0V to achieve Idd = 1200mA typical.
[2] Measurement taken at +7V @ 1200mA, Pout / Tone = +22 dBm
[3] Board loss subtracted out
1
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Trademarks and registered trademarks arAe tphepplriocpearttyioofntheSir urepsppecotivret:owPnehrso. ne: 978-250-3A3p4p3licaotrionaSpuppsp@orht:iPtthitoen.ec: o1-m800-ANALOG-D



HMC995LP5GE
HMC995LP5GE
V02.1112
GaAs pHEMT MMIC 3 WATT POWER AMPLIFIER SMT
WITH POWER DETECTOR, 12 - 16 GHz
Broadband Gain &
Return Loss vs. Frequency
35
Gain vs. Temperature [1]
38
25
+25C
34
+85C
-40C
15
S21
S11
30
5
S22
-5
-15
-25
E 10 11 12 13 14 15 16 17 18
FREQUENCY (GHz)
T Input Return Loss vs. Temperature
0
E -5
+25C
+85C
-40C
L -10
-15
O -20
-25
12
13
14
15
16
S FREQUENCY (GHz)
B P1dB vs. Temperature
40
38
+25C
+85C
O-40C
26
22
18
12
13
14
15
16
FREQUENCY (GHz)
Output Return Loss vs. Temperature
0
-5
-10
-15
-20
+25C
+85C
-40C
-25
-30
12
13
14
15
16
FREQUENCY (GHz)
P1dB vs. Supply Voltage
40
5V
38
6V
7V
36
36
34
34
32
32
30
30
28
12
13
14
15
16
FREQUENCY (GHz)
28
12
13
14
15
16
FREQUENCY (GHz)
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2
Trademarks and registered trademarks arAe tphepplriocpearttyioofntheSir urepsppecotivret:owPnehrso. ne: 978-250-3A3p4p3licaotrionaSpuppsp@orht:iPtthitoen.ec: o1-m800-ANALOG-D





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