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IMW120R140M1H Datasheet, Equivalent, Carbide MOSFET.

Silicon Carbide MOSFET

Silicon Carbide MOSFET

 

 

 

Part IMW120R140M1H
Description Silicon Carbide MOSFET
Feature IMW120R140M1H IMW120R140M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Very low switching losses Gate pin 1 Threshold-free on state characteristic Wide gate-sourc e voltage range Benchmark gate thresh old voltage, VGS(th) = 4.
5V 0V turn-o ff gate voltage for easy and simple gat e drive Fully controllable dV/dt Ro bust body diode for hard commutation Temperature independent turn-off switch ing losses Benefits Efficiency improv ement Enabling higher frequency Incre ased power density Cooling effort redu ction Reduction of system complexity a nd cost Potenti .
Manufacture Infineon
Datasheet
Download IMW120R140M1H Datasheet
Part IMW120R140M1H
Description Silicon Carbide MOSFET
Feature IMW120R140M1H IMW120R140M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Very low switching losses Gate pin 1 Threshold-free on state characteristic Wide gate-sourc e voltage range Benchmark gate thresh old voltage, VGS(th) = 4.
5V 0V turn-o ff gate voltage for easy and simple gat e drive Fully controllable dV/dt Ro bust body diode for hard commutation Temperature independent turn-off switch ing losses Benefits Efficiency improv ement Enabling higher frequency Incre ased power density Cooling effort redu ction Reduction of system complexity a nd cost Potenti .
Manufacture Infineon
Datasheet
Download IMW120R140M1H Datasheet

IMW120R140M1H

IMW120R140M1H
IMW120R140M1H

IMW120R140M1H

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