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MRF6VP3450HR5

Part Number	MRF6VP3450HR5
Manufacturer	NXP
Description	RF Power FET
Published	Jul 10, 2020
Detailed Description	Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs De...
Datasheet	MRF6VP3450HR5 PDF File

Overview

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz.
The high gain and broadband performance of these devices make them ideal for large--signal, common--source amplifier applications in 50 volt analog or digital television transmitter equipment.
• Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 1400 mA, Pout = 90 Watts Avg.
, f = 860 MHz, 8K Mode, 64 QAM Power Gain — 22.
5 dB Drain Efficiency — 28% ACPR @ 4 MHz Offset — --62 dBc @ 4 kHz Bandwidth • Typical Broadband Two--Tone Performance: VDD = 50 Volts, IDQ = 1400 mA, Pout ...

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