amplifier MMIC. BGS8M2 Datasheet

BGS8M2 MMIC. Datasheet pdf. Equivalent

Part BGS8M2
Description amplifier MMIC
Feature BGS8M2 SiGe:C low-noise amplifier MMIC with bypass switch for LTE Rev. 5 — 20 August 2018 Product.
Manufacture NXP
Datasheet
Download BGS8M2 Datasheet




BGS8M2
BGS8M2
SiGe:C low-noise amplifier MMIC with bypass switch for LTE
Rev. 5 — 20 August 2018
Product data sheet
1 General description
The BGS8M2 is, also known as the LTE3001M, a Low-Noise Amplifier (LNA) with bypass
switch for LTE receiver applications, available in a small plastic 6-pin extremely thin
leadless package. The BGS8M2 requires one external matching inductor.
The BGS8M2 delivers system-optimized gain for both primary and diversity applications
where sensitivity improvement is required. The high linearity of these low noise devices
ensures the required receive sensitivity independent of cellular transmit power level in
FDD (Frequency Division Duplex) systems. When receive signal strength is sufficient,
the BGS8M2 can be switched off to operate in bypass mode at a 1 µA current, to lower
power consumption.
The BGS8M2 is optimized for 1805 MHz to 2200 MHz.
2 Features and benefits
Operating frequency from 1805 MHz to 2200 MHz
Noise figure = 0.85 dB
Gain 14.4 dB
High input 1 dB compression point of -3.5 dBm
Bypass switch insertion loss of 2.2 dB
High in band IP3i of 3.5 dBm
Supply voltage 1.5 V to 3.1 V
Self-shielding package concept
Integrated supply decoupling capacitor
Optimized performance at a supply current of 5.8 mA
Power-down mode current consumption < 1 µA
Integrated temperature stabilized bias for easy design
Require only one input matching inductor
Input and output DC decoupled
ESD protection on all pins (HBM > 2 kV)
Integrated matching for the output
Available in 6-pins leadless package 1.1 mm x 0.7 mm x 0.37 mm; 0.4 mm pitch:
SOT1232
180 GHz transit frequency - SiGe:C technology
Moisture sensitivity level 1



BGS8M2
NXP Semiconductors
BGS8M2
SiGe:C low-noise amplifier MMIC with bypass switch for LTE
3 Applications
LNA for LTE reception in smart phones
Feature phones
Tablet PCs
RF front-end modules
BGS8M2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 20 August 2018
© NXP B.V. 2018. All rights reserved.
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