amplifier MMIC. BGU8L1 Datasheet

BGU8L1 MMIC. Datasheet pdf. Equivalent

Part BGU8L1
Description amplifier MMIC
Feature ;621 BGU8L1 SiGe:C low-noise amplifier MMIC for LTE Rev. 3 — 16 January 2017 Product data sheet .
Manufacture NXP
Datasheet
Download BGU8L1 Datasheet




BGU8L1
BGU8L1
SiGe:C low-noise amplifier MMIC for LTE
Rev. 3 — 16 January 2017
Product data sheet
1. General description
The BGU8L1 is, also known as the LTE1001L, a Low-Noise Amplifier (LNA) for LTE
receiver applications, available in a small plastic 6-pin extremely thin leadless package.
The BGU8L1 requires one external matching inductor.
The BGU8L1 adapts itself to the changing environment resulting from co-habitation of
different radio systems in modern cellular handsets. It has been designed for low power
consumption and optimal performance. At low jamming power levels, it delivers 14 dB
gain at a noise figure of 0.7 dB. During high-power levels, it temporarily increases its bias
current to improve sensitivity.
The BGU8L1 is optimized for 728 MHz to 960 MHz.
2. Features and benefits
Operating frequency from 728 MHz to 960 MHz
Noise figure = 0.7 dB
Gain = 14 dB
High input 1 dB compression point of 3 dBm
High in band IP3i of 2 dBm
Supply voltage 1.5 V to 3.1 V
Self-shielding package concept
Integrated supply decoupling capacitor
Optimized performance at a supply current of 4.6 mA
Power-down mode current consumption < 1 A
Integrated temperature stabilized bias for easy design
Require only one input matching inductor
Output DC decoupled
ESD protection on all pins (HBM > 2 kV)
Integrated matching for the output
Available in a 6-pin leadless package 1.1 mm 0.7 mm 0.37 mm; 0.4 mm pitch:
SOT1232
180 GHz transit frequency - SiGe:C technology
Moisture sensitivity level 1



BGU8L1
NXP Semiconductors
BGU8L1
SiGe:C low-noise amplifier MMIC for LTE
3. Applications
LNA for LTE reception in smart phones
Feature phones
Tablet PCs
RF front-end modules
4. Quick reference data
Table 1. Quick reference data
f = 882 MHz; VCC = 2.8 V; VI(ENABLE) 0.8 V; Tamb = 25 °C; input matched to 50 using a 15 nH inductor;
unless otherwise specified.
Symbol
Parameter
Conditions
Min Typ Max
VCC
supply voltage
ICC
supply current
Gp
power gain
NF
noise figure
1.5
2.6
[1] 12.5
[1][2][3] -
-
4.6
14.5
0.7
3.1
6.6
16.5
1.3
Pi(1dB)
IP3i
input power at 1 dB gain compression
input third-order intercept point
[1][3] 7.0 3.0 -
[1][3] 3.0 +2.0 -
[1] E-UTRA operating band 5 (869 MHz to 894 MHz).
[2] PCB losses are subtracted.
[3] Guaranteed by device design; not tested in production.
Unit
V
mA
dB
dB
dBm
dBm
5. Ordering information
Table 2. Ordering information
Type number
Package
Name
Description
BGU8L1
XSON6
plastic extremely thin small outline package; no leads; 6 terminals;
body 1.1 0.7 0.37 mm
Version
SOT1232
BGU8L1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 16 January 2017
© NXP Semiconductors N.V. 2017. All rights reserved.
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