LDMOS Transistors. AFT23S160W02GSR3 Datasheet

AFT23S160W02GSR3 Transistors. Datasheet pdf. Equivalent

Part AFT23S160W02GSR3
Description RF Power LDMOS Transistors
Feature Freescale Semiconductor Technical Data Document Number: AFT23S160W02S Rev. 0, 11/2013 RF Power LDM.
Manufacture NXP
Datasheet
Download AFT23S160W02GSR3 Datasheet



AFT23S160W02GSR3
Freescale Semiconductor
Technical Data
Document Number: AFT23S160W02S
Rev. 0, 11/2013
RF Power LDMOS Transistors
N−Channel Enhancement−Mode Lateral MOSFETs
These 45 watt RF power LDMOS transistors are designed for cellular base
station applications requiring very wide instantaneous bandwidth capability
covering the frequency range of 2300 to 2400 MHz.
Typical Single−Carrier W−CDMA Performance: VDD = 28 Vdc,
IDQ = 1100 mA, Pout = 45 Watts Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency
Gps
(dB)
hD
Output PAR ACPR
IRL
(%)
(dB)
(dBc) (dB)
2300 MHz
2350 MHz
2400 MHz
17.7
31.0
17.8
30.5
17.9
30.3
6.8
−34.6
−18
6.7
−34.5
−25
6.6
−33.9
−14
Features
Designed for Wide Instantaneous Bandwidth Applications
Greater Negative Gate−Source Voltage Range for Improved Class C
Operation
Able to Withstand Extremely High Output VSWR and Broadband Operating
Conditions
Optimized for Doherty Applications
In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13−inch Reel.
AFT23S160W02SR3
AFT23S160W02GSR3
2300−2400 MHz, 45 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTORS
NI−780S−2L
AFT23S160W02SR3
NI−780GS−2L
AFT23S160W02GSR3
RFin/VGS 2
1 RFout/VDS
(Top View)
Figure 1. Pin Connections
© Freescale Semiconductor, Inc., 2013. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
AFT23S160W02SR3 AFT23S160W02GSR3
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AFT23S160W02GSR3
Table 1. Maximum Ratings
Rating
Drain−Source Voltage
Gate−Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range (1,2)
Table 2. Thermal Characteristics
Symbol
Value
Unit
VDSS
−0.5, +65
Vdc
VGS
−6.0, +10
Vdc
VDD
32, +0
Vdc
Tstg
−65 to +150
°C
TC
−40 to +125
°C
TJ
−40 to +225
°C
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 81°C, 45 W CW, 28 Vdc, IDQ = 1100 mA, 2400 MHz
RθJC
0.53
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22−A114)
Machine Model (per EIA/JESD22−A115)
Charge Device Model (per JESD22−C101)
Class
2
B
IV
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate−Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IDSS
10
μAdc
IDSS
5
μAdc
IGSS
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 219 μAdc)
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1100 mAdc, Measured in Functional Test)
Drain−Source On−Voltage
(VGS = 6 Vdc, ID = 2.19 Adc)
VGS(th)
0.9
1.3
1.7
Vdc
VGS(Q)
1.4
1.8
2.2
Vdc
VDS(on)
0.1
0.2
0.3
Vdc
Functional Tests (4,5) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, Pout = 45 W Avg., f = 2400 MHz,
Single−Carrier W−CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
17.0
17.9
19.0
dB
Drain Efficiency
ηD
28.0
30.3
%
Output Peak−to−Average Ratio @ 0.01% Probability on CCDF
PAR
6.1
6.6
dB
Adjacent Channel Power Ratio
ACPR
−33.9
−31.5
dBc
Input Return Loss
IRL
−14
−8
dB
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes − AN1955.
4. Part internally matched both on input and output.
5. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GS) parts.
(continued)
AFT23S160W02SR3 AFT23S160W02GSR3
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RF Device Data
Freescale Semiconductor, Inc.







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