Photodiode. WP3DPD1C Datasheet

WP3DPD1C Photodiode. Datasheet pdf. Equivalent

Part WP3DPD1C
Description Photodiode
Feature WP3DPD1C Photodiode DESCRIPTION z Made with PIN silicon phototransistor chips FEATURES z Mechanicall.
Manufacture Kingbright
Datasheet
Download WP3DPD1C Datasheet




WP3DPD1C
WP3DPD1C
Photodiode
DESCRIPTION
z Made with PIN silicon phototransistor chips
FEATURES
z Mechanically and spectrally matched to the infrared
emitting LED lamp
z RoHS compliant
APPLICATIONS
z Infrared applied systems
z Optoelectronic switches
z Photodetector control circuits
z Sensor technology
PACKAGE DIMENSIONS
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is ±0.25(0.01") unless otherwise noted.
3. Lead spacing is measured where the leads emerge from the package.
4. The specifications, characteristics and technical data described in the datasheet are subject to change
without prior notice.
ABSOLUTE MAXIMUM RATINGS at TA=25°C
Parameter
Max.Ratings
Power Dissipation
150
Operating Temperature
-40 to +85
Storage Temperature
-40 to +85
Lead Solder Temperature [1]
260°C For 3 Seconds
Lead Solder Temperature [2]
260°C For 5 Seconds
Notes:
1. 2mm below package base.
2. 5mm below package base.
3. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity – Ref JEDEC/JESD625-A and JEDEC/J-STD-033.
© 2018 Kingbright. All Rights Reserved. Spec No: DSAF7367 / 1101016981 Rev No: V.3 Date: 08/10/2018
Units
mW
°C
°C
Page 1 / 4



WP3DPD1C
ELECTRICAL / OPTICAL CHARACTERISTICS at TA=25°C
Parameter
Symbol
Min.
Reverse Break down Voltage
Reverse Dark Current
Open Circuit Voltage
Rise Time
Fall Time
Light current
V(BR)R
ID(R)
VOC
TR
TF
IS
33
-
-
-
-
0.07
Total Capacitance
CT
-
Range of spectral bandwidth
Wavelength of peak sensitivity
Angle of half sensitivity
λ0.1
420
λp
-
2θ1/2
-
TECHNICALDATA
RELATIVE SPECTRAL SENSITIVITY vs. WAVELENGTH
100%
80%
Ta = 25 °C
60%
40%
20%
0%
350 450 550
650 750 850
Wavelength (nm)
950 1050 1150
WP3DPD1C
Typ.
170
-
390
6
6
0.16
5
-
940
50
Max.
-
10
-
-
-
-
-
1120
-
-
Units
V
nA
mV
nS
nS
uA
pF
nm
nm
deg
Test Conditions
IR = 100uA
H = 0mW/cm2
VR = 10V
H = 0mW/cm2
λ = 940nm
H = 5mW/cm2
VR = 10V
λ = 940nm
RL = 1000
VR = 5V
Ee = 0.08mW/cm2
λ = 940nm
VR = 10V
F = 1MHZ
H = 0mW/cm2
-
-
-
RELATIVE RADIANT SENSITIVITY vs. ANGULAR DISPLACEMENT
Ta = 25 °C
-15°
-30°
-45°
15°
30°
45°
-60°
60°
-75°
75°
-90°
90°
1.0
0.5
0.0
0.5
1.0
Light Current vs.
Irradiance
100
VR=5V
10 Ta = 25 °C
1
0.1
0.01
1
10 100 1000
Irradiance Ee (µW /cm2)
10000
PHOTODIODE
Power Dissipation vs.
Ambient Temperature
200
150
Dark Current vs.
Reverse Voltage
10
Ta = 25 °C
1
100
0.1
50
0
0 20 40 60 80 100
Ambient temperature (°C)
0.01
0
5 10 15 20 25 30
Reverse voltage VR (V)
© 2018 Kingbright. All Rights Reserved. Spec No: DSAF7367 / 1101016981 Rev No: V.3 Date: 08/10/2018
Dark Current vs.
Ambient Temperature
1000
100
VCE = 20V
Ee = 0
10
1
0.1
0
25 50 75 100
Ambient temperature (°C)
Page 2 / 4







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)