Operational Amplifier. LM4562 Datasheet

LM4562 Amplifier. Datasheet pdf. Equivalent

Part LM4562
Description High-Fidelity Audio Operational Amplifier
Feature LM4562 www.ti.com SNAS326K – AUGUST 2006 – REVISED DECEMBER 2013 LM4562 Dual High-Performance, Hi.
Manufacture etcTI
Datasheet
Download LM4562 Datasheet




LM4562
LM4562
www.ti.com
SNAS326K – AUGUST 2006 – REVISED DECEMBER 2013
LM4562 Dual High-Performance, High-Fidelity Audio Operational Amplifier
Check for Samples: LM4562
FEATURES
1
2 Easily Drives 600Loads
• Optimized for Superior Audio Signal Fidelity
• Output Short Circuit Protection
• PSRR and CMRR Exceed 120dB (Typ)
• SOIC, PDIP, and TO-99 Packages
APPLICATIONS
• Ultra High-Quality Audio Amplification
• High-Fidelity Preamplifiers
• High-Performance Professional Audio
• High-Fidelity Active Equalization and
Crossover Networks
• High-Performance Line Drivers and Receivers
KEY SPECIFICATIONS
• Power Supply Voltage Range: ±2.5V to ± 17V
• THD+N (AV = 1, VOUT = 3VRMS, fIN = 1kHz)
– RL = 2k: 0.00003% (typ)
– RL = 600: 0.00003% (typ)
• Input Noise Density: 2.7nV/Hz (typ)
• Slew Rate: ±20V/μs (typ)
• Gain Bandwidth Product: 55MHz (typ)
• Open Loop Gain (RL = 600): 140dB (typ)
• Input Bias Current: 10nA (typ)
• Input Offset Voltage: 0.1mV (typ)
• DC Gain Linearity Error: 0.000009%
DESCRIPTION
The LM4562 is part of the ultra-low distortion, low-
noise, high-slew-rate operational amplifier series
optimized and fully specified for high-performance,
high-fidelity applications. The LM4562 audio
operational amplifiers deliver superior audio signal
amplification for outstanding audio performance. The
LM4562 combines extremely low voltage noise
density (2.7nV/Hz) with vanishingly low THD+N
(0.00003%) to easily satisfy the most demanding
audio applications. To ensure that the most
challenging loads are driven without compromise, the
LM4562 has a high slew rate of ±20V/μs and an
output current capability of ±26mA. Further, dynamic
range is maximized by an output stage that drives
2kloads to within 1V of either power supply voltage
and to within 1.4V when driving 600loads.
The LM4562's outstanding CMRR (120dB), PSRR
(120dB), and VOS (0.1mV) give the amplifier excellent
operational amplifier DC performance.
The LM4562 has a wide supply range of ±2.5V to
±17V. Over this supply range the LM4562’s input
circuitry maintains excellent common-mode and
power supply rejection, as well as maintaining its low
input bias current. The LM4562 is unity gain stable.
This Audio Operational Amplifier achieves
outstanding AC performance while driving complex
loads with values as high as 100pF.
The LM4562 is available in an 8-lead narrow body
SOIC, an 8-lead PDIP, and an 8-lead TO-99.
TYPICAL APPLICATION
150:
3320:
150:
3320:
10 pF
INPUT
47 k:
-
LM4562
+
26.1 k:
+
909:
22 nF//4.7 nF//500 pF
3.83 k:
+
100 :
47 nF//33 nF
-
LM4562
+
OUTPUT
A. 1% metal film resistors, 5% polypropylene capacitors
Passively Equalized RIAA Phono Preamplifier
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
2
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2006–2013, Texas Instruments Incorporated



LM4562
LM4562
SNAS326K – AUGUST 2006 – REVISED DECEMBER 2013
CONNECTION DIAGRAMS
Dual-In-Line Package
1
OUTPUT A
8 V+
OUTPUT A 1
2
INVERTING INPUT A
NON-INVERTING 3
INPUT A
A
B
- ++ -
7
OUTPUT B
INVERTING
2
INPUT A
NON-INVERTING
3
INPUT A
6
INVERTING INPUT B
www.ti.com
V+
8
7 OUTPUT B
INVERTING
6
INPUT B
NON-INVERTING
5
INPUT B
4
V-
V- 4
5 NON-INVERTING
INPUT B
Figure 1. 8-Lead SOIC (D Package)
8-Lead PDIP (P Package)
Figure 2. 8-Lead TO-99 (LMC Package)
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS(1)(2)(3)
Power Supply Voltage (VS = V+ - V-)
Storage Temperature
36V
65°C to 150°C
Input Voltage
Output Short Circuit(4)
(V-) - 0.7V to (V+) + 0.7V
Continuous
Power Dissipation
ESD Susceptibility(5)
ESD Susceptibility(6)
Pins 1, 4, 7 and 8
Internally Limited
2000V
200V
Pins 2, 3, 5 and 6
100V
Junction Temperature
150°C
Thermal Resistance
Temperature Range (TMIN TA TMAX)
Supply Voltage Range
θJA (D)
θJA (P)
θJA (LMC)
θJC (LMC)
145°C/W
102°C/W
150°C/W
35°C/W
–40°C TA 85°C
±2.5V VS ± 17V
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
(2) Operating Ratings indicate conditions for which the device is functional, but do not ensure specific performance limits. For ensured
specifications and test conditions, see the Electrical Characteristics. The ensured specifications apply only for the test conditions listed.
Some performance characteristics may degrade when the device is not operated under the listed test conditions.
(3) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
(4) Amplifier output connected to GND, any number of amplifiers within a package.
(5) Human body model, 100pF discharged through a 1.5kresistor.
(6) Machine Model ESD test is covered by specification EIAJ IC-121-1981. A 200pF cap is charged to the specified voltage and then
discharged directly into the IC with no external series resistor (resistance of discharge path must be under 50).
2
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Copyright © 2006–2013, Texas Instruments Incorporated







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