N-Channel MOSFET. BSS138AKDW Datasheet

BSS138AKDW MOSFET. Datasheet pdf. Equivalent

Part BSS138AKDW
Description Dual N-Channel MOSFET
Feature MCC R Micro Commercial Components Micro Commercial Components 130 W Cochran St, Unit B Simi Valley,.
Manufacture MCC
Datasheet
Download BSS138AKDW Datasheet



BSS138AKDW
MCC
R
Micro Commercial Components
Micro Commercial Components
130 W Cochran St, Unit B
Simi Valley, CA 93065
Tel:818-701-4933
Features
Halogen free available upon request by adding suffix "-HF"
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
High dense cell design for extremely low RDS(ON)
ESD protected:1500V
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol
VDS
ID
VGS
PD
R©JA
TJ
TSTG
Parameter
Drain-source Voltage
Drain Current-Continuous
Gate-source Voltage
Total Power Dissipation
Thermal Resistance Junction to Ambient
Operating Junction Temperature
Storage Temperature
Rating
50
0.22
±20
0.35
357
-55 to +150
-55 to +150
Unit
V
A
V
W
к/W
к
к
Equivalent Circuit
Dot denotes Pin1
BSS138AKDW
Dual
N-Channel MOSFET
SOT-363
B
C
A
H
K
M
J
D
L
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.006
.014
0.15
0.35
B
.045
.053
1.15
1.35
C
.085
.096
2.15
2.45
D
.026
0.65Nominal
G
.047
.055
1.20
1.40
H
.071
.087
1.80
2.20
J
---
.004
---
0.10
K
.031
.043
0.80
1.10
L
.010
.018
0.26
0.46
M
.003
.006
0.08
0.15
Revision: $
www.mccsemi.com
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201/07/17



BSS138AKDW
MCC
R
Micro Commercial Components
Electrical characteristics (TA=25 oC, unless otherwise noted)
Parameter
Symbol
Test Condition
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS VGS = 0V, ID =250μA
Zero gate voltage drain current
IDSS
VDS =48V,VGS = 0V
Gate-body leakage current
Gate threshold voltage1)
IGSS
VGS(th)
VGS =±20V, VDS = 0V
VDS = VGS, ID =250μA
Drain-source on-resistance1)
Forward transconductance1)
RDS(on)
gFS
VGS =10V, ID =500mA
VGS =4.5V, ID =200mA
VDS =25V, ID =0.2A
Dynamic characteristics
Input Capacitance
Ciss
Output Capacitance
Coss VDS=25V,VGS=0V,f=1MHz
Reverse Transfer Capacitance
Crss
Switching Characteristics1)
Turn-on delay time
td(on)
Turn-off delay time
td(off)
Source-Drain Diode characteristics
VDD = 30 V, VGEN = 10 V,
RG =25Ω ,RL =60Ω,
ID =500 mAdc
Diode Forward voltage
VSD
VGS =0V, IS=500mA
Notes:
1) Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
Min. Typ. Max. Unit
50
V
1
μA
±10 μA
0.8
1 1.45 V
1.9
3
Ω
2.4
4
100
S
22.8
3.5
pF
2.9
3.8
nS
19
0.5
1.3
V
Revision: $
www.mccsemi.com
2 of 4
201/07/17





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