P-Channel FET. MCMP06 Datasheet

MCMP06 FET. Datasheet pdf. Equivalent

Part MCMP06
Description P-Channel FET
Feature MCC R Micro Commercial Components   omponents 20736 Marilla Street Chatsworth .
Manufacture MCC
Datasheet
Download MCMP06 Datasheet




MCMP06
MCC
R
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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MCMP06
Features
Halogen free available upon request by adding suffix "-HF"
Featuring a MOSFET and Schottky Diode
Lead Free Finish/Rohs Compliant ("P"Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Marking:06
Maximum ratings ( Ta=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Power Dissipation
PD
Thermal Resistance from
Junction to Ambient (NOTE1)
RθJA
Operating Junction Temperature TJ
Storage Temperature
TSTG
Value
-20
±8
-2.0
0.7
178
150
-55 ~+150
P-Channel
Enhancement Mode
Field Effect Transistor
DFN2020-6U
D
Unit
C
V
A
V
B
E
A
W
L
/W
J
K
G
F
F
H
Equivalent Circuit
A1
N/C 2
D3
K
6K
5G
D
4S
DIM
A
B
C
D
E
F
G
H
J
K
L
Dimensions
INCHES
MM
MIN
0.028
MAX
.035
0.008REF.
0000
0.002
0.076
0.082
0.076
0.082
0.020
0.035
0.028
0.043
0.010
0.008
0.014
---
0.007
0.013
0.026TYP.
MIN
MAX
0.700
0.900
0.203REF.
0.000
0.050
1.924
1.924
2.076
2.076
0.520
0.720
0.900
1.100
0.250
0.200
0.350
---
0.174
0.326
0.650TYP.
NOTE
Revision: A
www.mccsemi .com
1 of 5
2016/05/14



MCMP06
MCC
R
Micro Commercial Components
MOSFET ELECTRICAL CHARACTERISTICS(Ta=25unless otherwise noted)
Parameter
Symbol
Test Condition
Min Typ Max Unit
On/Off Characteristics
Drain-source breakdown voltage
Gate-threshold voltage
V(BR)DSS
VGS(th)
VGS = 0V, ID =-250µA
VDS =VGS, ID =-250µA
-2
-0.4
V
-1
Gate-body leakage current
IGSS VDS =0V, VGS =±8V
±100 nA
Zero gate voltage drain current
IDSS VDS =-20V, VGS =0V
-1
µA
Drain-source on-state resistance (note 1)
RDS(on)
VGS =-4.5V, ID =-2.8A
VGS =-2.5V, ID =-2.0A
110
m
150
Forward transconductance (note 1)
gFS
VDS =-10V, ID =-2.7A
5.5
S
Charges , Capacitances and Gate resistance
Input capacitance (note 2)
Ciss
480
Output capacitance (note 2)
Coss VDS =-15V,VGS =0V,f =1MHz
46
pF
Reverse transfer capacitance (note 2)
Crss
10
Total gate charge
Qg
7.2
Gate-source charge
Qgs VDS =-6V,VGS =-4.5V,ID =-2.8A
2.2
nC
Gate-drain charge
Qgd
1.2
Switching times (note2)
Turn-on delay time
td(on)
38
Rise time
Turn-off delay time
tr
td(off)
VDS=-6V, RL=6,
VGS=-4.5V,RGEN=6
25
ns
43
Fall time
tf
5
Source-drain diode characteristics
Forward on voltage (note1)
VSD VGS =0V, IS=-1A
-1.4
V
Notes:
1. Pulse Test : Pulse width300µs, duty cycle 2%.
2. These parameters have no way to verify.
Revision: A
www.mccsemi .com
2 of 5
2016/05/14







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