N-channel FET. MCDS04N60 Datasheet

MCDS04N60 FET. Datasheet pdf. Equivalent

Part MCDS04N60
Description N-channel FET
Feature MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth .
Manufacture MCC
Datasheet
Download MCDS04N60 Datasheet




MCDS04N60
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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MCDS04N60
Features
High Current Rating
Lower Capacitance
Lower RdS(ON)
Lower Total Gate Charge
Tighter VSD Specifications
Avalanche Energy Specified
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol
VDS
ID
IS
VGSS
EAS
Parameter
Drain-source Voltage
Drain Current-Continuous
Continuous Drain-Source Diode Forward Current
Gate-source Voltage
Single Pulsed Avalanche Energy(note1)
Rating
600
4.0
4.0
f30
260
R©JA
TJ
TSTG
TL
Thermal Resistance Junction to Ambient
Operating Junction Temperature
Storage Temperature
Maximum lead temperure for soldering
purposes,1/8" from case for 5 seconds
100
-55 to +150
-55 to +150
260
Unit
V
A
A
V
mJ
к/W
к
к
к
N-Channel
Enhancement Mode
Field Effect Transistor
TO-251S
D
A
E
B
C
L
FG
H
123
K
J
I
Internal Block Diagram
M
G
Revision: A
D
O
1.GATE
N
2.DRAIN
3.SOURCE
INCHES
DIM
MIN
MAX
A
.087
.094
B
.018
.023
C
.000
.012
S
D
.256
.264
E
.201
.215
F
.043
.051
G
.236
.244
H
.409
.433
I
.018
.023
J
.026
.034
K
.086
.094
L
0.063REF.
M
0.211REF.
N
0.138REF.
O
0.190REF.
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MIN
2.20
MM
MAX
2.40
0.46
0.00
6.50
5.10
1.10
6.00
10.4
0.58
0.30
6.70
5.46
1.30
6.20
11.0
0.46
0.58
0.66
0.86
2.19
2.39
1.600REF.
5.350REF.
3.500REF.
4.830REF.
NOTE
Φ
2016/01/13



MCDS04N60
MCC
TM
Micro Commercial Components
Electrical characteristics (Ta=25Я unless otherwise noted)
Parameter
Symbol
Test Condition
Min Typ Max Unit
Off characteristics
Drain-source breakdown voltage
V(BR)DSS VGS = 0V, ID =250µA
600
V
Drain-source diode forward voltage(note2)
VSD
VGS = 0V, IS =4.0A
1.5
Zero gate voltage drain current
Gate-body leakage current, forward(note2)
Gate-body leakage current, reverse(note2)
On characteristics (note2)
IDSS
IGSSF
IGSSR
VDS =600V, VGS =0V
VDS =0V, VGS =30V
VDS =0V, VGS =-30V
25
µA
100
nA
-100
Gate-threshold voltage
Static drain-source on-resistance
VGS(th) VDS =VGS, ID =250µA
RDS(on) = VGS =10V, ID 2.0A
2.0
4.0
V
2.0 3.0
Forward transconductance
gfs
VDS =50V, ID =2A
2.0 2.6
S
Dynamic characteristics (note 3)
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching characteristics
Ciss
Coss
Crss
VDS =25V,VGS =0V,f =1MHz
540
760
125
180 pF
8.0
20
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time (note3)
Turn-on rise time (note3)
Turn-off delay time (note3)
Qg
Qgs
Qgd
td(on)
tr
td(off)
VDS =480V,VGS =10V,ID =4.0A
VDD=300V, VGS=10V,
RG=9.1. , ID =4.0A
5.0
10
2.7
nC
2.0
12
20
7.0
10
ns
19
40
Turn-off fall time (note3)
tf
10
20
Notes :
1. L= 30mH, IL=4 A, VDD=100V, VGS=10V,RG=25 ,Starting TJ=25Я.
2. Pulse Test : Pulse width≤300µs, duty cycle ≤2%.
3. These parameters have no way to verify.
Revision: A
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2016/01/13







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